Photoemission spectroscopy has been used to study the Schottky-barrier formation of In on n- and p-type GaAs(110) interfaces. Our result is different from that reported by R. R. Daniels et al. [J. Vac. Sci. Technol. A 2(2), 831 (1984)]. It is suggested that this incongruous behavior of In on GaAs(110) is due to the kinetics of interface defect formation. Various experimental details which may affect the kinetics are also discussed.
|Original language||English (US)|
|Number of pages||2|
|Journal||Physical Review B|
|State||Published - 1985|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics