Abstract
Photoemission spectroscopy has been used to study the Schottky-barrier formation of In on n- and p-type GaAs(110) interfaces. Our result is different from that reported by R. R. Daniels et al. [J. Vac. Sci. Technol. A 2(2), 831 (1984)]. It is suggested that this incongruous behavior of In on GaAs(110) is due to the kinetics of interface defect formation. Various experimental details which may affect the kinetics are also discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 6902-6903 |
| Number of pages | 2 |
| Journal | Physical Review B |
| Volume | 32 |
| Issue number | 10 |
| DOIs | |
| State | Published - 1985 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics