Possibility of incongruous interface behavior of in on GaAs(110)

K. K. Chin, I. Lindau

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Photoemission spectroscopy has been used to study the Schottky-barrier formation of In on n- and p-type GaAs(110) interfaces. Our result is different from that reported by R. R. Daniels et al. [J. Vac. Sci. Technol. A 2(2), 831 (1984)]. It is suggested that this incongruous behavior of In on GaAs(110) is due to the kinetics of interface defect formation. Various experimental details which may affect the kinetics are also discussed.

Original languageEnglish (US)
Pages (from-to)6902-6903
Number of pages2
JournalPhysical Review B
Volume32
Issue number10
DOIs
StatePublished - Jan 1 1985
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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