Post-anodization implantation and CVD techniques for passivation of porous silicon

S. P. Duttagupta, L. Tsybeskov, P. M. Fauchet, E. Ettedgui, Y. Gao

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations


This report shows that passivation of a few surface monolayers can suffice to provide stable PL without affecting the bulk characteristics. It was established that, if the hydrogen at the surface is substituted by oxygen, the resulting Si-Ox passivation is significantly more stable. To achieve this, one has to implant low energy/low dose oxygen to form a thin coating of SiO2 on the surface, Post implantation FTIR data report the absence of Si-H peaks. XPS data indicate the formation of nearly stoichiometric SiO2 at the surface.

Original languageEnglish (US)
Pages (from-to)381-386
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 28 1994Nov 30 1994

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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