Post-anodization implantation and CVD techniques for passivation of porous silicon

S. P. Duttagupta; L. Tsybeskov; P. M. Fauchet; E. Ettedgui; Y. Gao

Post-anodization implantation and CVD techniques for passivation of porous silicon

S. P. Duttagupta, L. Tsybeskov, P. M. Fauchet, E. Ettedgui, Y. Gao

Research output: Contribution to journal › Conference article › peer-review

Abstract

This report shows that passivation of a few surface monolayers can suffice to provide stable PL without affecting the bulk characteristics. It was established that, if the hydrogen at the surface is substituted by oxygen, the resulting Si-O_x passivation is significantly more stable. To achieve this, one has to implant low energy/low dose oxygen to form a thin coating of SiO₂ on the surface, Post implantation FTIR data report the absence of Si-H peaks. XPS data indicate the formation of nearly stoichiometric SiO₂ at the surface.

Original language	English (US)
Pages (from-to)	381-386
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	358
State	Published - 1995
Externally published	Yes
Event	Proceedings of the 1994 MRS Fall Meeting - Boston, MA, USA Duration: Nov 28 1994 → Nov 30 1994

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Post-anodization implantation and CVD techniques for passivation of porous silicon",

abstract = "This report shows that passivation of a few surface monolayers can suffice to provide stable PL without affecting the bulk characteristics. It was established that, if the hydrogen at the surface is substituted by oxygen, the resulting Si-Ox passivation is significantly more stable. To achieve this, one has to implant low energy/low dose oxygen to form a thin coating of SiO2 on the surface, Post implantation FTIR data report the absence of Si-H peaks. XPS data indicate the formation of nearly stoichiometric SiO2 at the surface.",

author = "Duttagupta, {S. P.} and L. Tsybeskov and Fauchet, {P. M.} and E. Ettedgui and Y. Gao",

year = "1995",

language = "English (US)",

volume = "358",

pages = "381--386",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Fall Meeting ; Conference date: 28-11-1994 Through 30-11-1994",

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TY - JOUR

T1 - Post-anodization implantation and CVD techniques for passivation of porous silicon

AU - Duttagupta, S. P.

AU - Tsybeskov, L.

AU - Fauchet, P. M.

AU - Ettedgui, E.

AU - Gao, Y.

PY - 1995

Y1 - 1995

N2 - This report shows that passivation of a few surface monolayers can suffice to provide stable PL without affecting the bulk characteristics. It was established that, if the hydrogen at the surface is substituted by oxygen, the resulting Si-Ox passivation is significantly more stable. To achieve this, one has to implant low energy/low dose oxygen to form a thin coating of SiO2 on the surface, Post implantation FTIR data report the absence of Si-H peaks. XPS data indicate the formation of nearly stoichiometric SiO2 at the surface.

AB - This report shows that passivation of a few surface monolayers can suffice to provide stable PL without affecting the bulk characteristics. It was established that, if the hydrogen at the surface is substituted by oxygen, the resulting Si-Ox passivation is significantly more stable. To achieve this, one has to implant low energy/low dose oxygen to form a thin coating of SiO2 on the surface, Post implantation FTIR data report the absence of Si-H peaks. XPS data indicate the formation of nearly stoichiometric SiO2 at the surface.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029214005&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029214005

SN - 0272-9172

VL - 358

SP - 381

EP - 386

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Fall Meeting

Y2 - 28 November 1994 through 30 November 1994

ER -

Post-anodization implantation and CVD techniques for passivation of porous silicon

Abstract

All Science Journal Classification (ASJC) codes

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