Post plasma oxidation processed ALD Al₂O₃/Hf_1-xZr_xO₂ thin films on ge substrates: Reliability

Keyphrases

• Plasma Oxidation 100%
• CexZr1-xO2 100%
• Equivalent Oxide Thickness 100%
• Ge Substrate 100%
• ALD Al2O3 100%
• Dielectric 50%
• Flat-band Voltage 50%
• Zr Content 50%
• C-V Hysteresis 50%
• Zr Incorporation 50%
• Gap Density 50%
• Antenna 25%
• Interface Properties 25%
• HfO2 25%
• Gate Stack 25%
• Leakage Current 25%
• Deposition Process 25%
• Aluminum Oxide 25%
• Interfacial Layer 25%
• Interface State Density 25%
• Metal Deposition 25%
• Layer Formation 25%
• Zr Addition 25%
• Weibull Plot 25%
• Hysteresis Current 25%
• Charge to Breakdown 25%
• ALD Deposition 25%
• I-V Performance 25%
• Acceleration Factor 25%
• Quality Properties 25%

Material Science

• Thin Films 100%
• Oxide Compound 100%
• Oxidation Reaction 100%
• Al2O3 100%
• Density 75%
• Dielectric Material 50%
• Interface Property 25%
• Metal Deposition 25%

Engineering

• Thin Films 100%
• Oxide Thickness 100%
• Ge Substrate 100%
• Dielectrics 50%
• Defects 25%
• Antenna 25%
• Gate Stack 25%
• Interfacial Layer 25%
• Interface State 25%
• Deposition Process 25%
• Acceleration Factor 25%