Preparation and characterization of ultrathin porous silicon films

J. Von Behren; L. Tsybeskov; P. M. Fauchet

doi:10.1063/1.113885

Preparation and characterization of ultrathin porous silicon films

J. Von Behren, L. Tsybeskov, P. M. Fauchet

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

Light emitting porous silicon thin films with thicknesses from ∼0.1 to ∼100 μm were produced by electrochemical etching and subsequently lifted off the silicon wafer by an electropolishing step. The structural integrity of the thinner layers was maintained by deposition on sapphire windows where they remain attached by van der Waals or electrostatic forces. The procedure for manufacturing high quality layers and their structural and optical properties is discussed.

Original language	English (US)
Pages (from-to)	1662
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113885
State	Published - 1995
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.113885

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title = "Preparation and characterization of ultrathin porous silicon films",

abstract = "Light emitting porous silicon thin films with thicknesses from ∼0.1 to ∼100 μm were produced by electrochemical etching and subsequently lifted off the silicon wafer by an electropolishing step. The structural integrity of the thinner layers was maintained by deposition on sapphire windows where they remain attached by van der Waals or electrostatic forces. The procedure for manufacturing high quality layers and their structural and optical properties is discussed.",

author = "{Von Behren}, J. and L. Tsybeskov and Fauchet, {P. M.}",

year = "1995",

doi = "10.1063/1.113885",

language = "English (US)",

pages = "1662",

journal = "Applied Physics Letters",

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T1 - Preparation and characterization of ultrathin porous silicon films

AU - Von Behren, J.

AU - Tsybeskov, L.

AU - Fauchet, P. M.

PY - 1995

Y1 - 1995

N2 - Light emitting porous silicon thin films with thicknesses from ∼0.1 to ∼100 μm were produced by electrochemical etching and subsequently lifted off the silicon wafer by an electropolishing step. The structural integrity of the thinner layers was maintained by deposition on sapphire windows where they remain attached by van der Waals or electrostatic forces. The procedure for manufacturing high quality layers and their structural and optical properties is discussed.

AB - Light emitting porous silicon thin films with thicknesses from ∼0.1 to ∼100 μm were produced by electrochemical etching and subsequently lifted off the silicon wafer by an electropolishing step. The structural integrity of the thinner layers was maintained by deposition on sapphire windows where they remain attached by van der Waals or electrostatic forces. The procedure for manufacturing high quality layers and their structural and optical properties is discussed.

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U2 - 10.1063/1.113885

DO - 10.1063/1.113885

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SN - 0003-6951

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JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Preparation and characterization of ultrathin porous silicon films

Abstract

All Science Journal Classification (ASJC) codes

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