Preparation and properties of amorphous phosphorus nitride prepared in a low-pressure plasma

S. Vepřek; Z. Iqbal; J. Brunner; M. Schärli

doi:10.1080/01418638108222114

Preparation and properties of amorphous phosphorus nitride prepared in a low-pressure plasma

S. Vepřek, Z. Iqbal, J. Brunner, M. Schärli

Research output: Contribution to journal › Article › peer-review

72 Scopus citations

Abstract

Thin films of amorphous P₃N₅ and P₃N₅H_x have been deposited in a low-pressure plasma either from the elements or from phosphine and nitrogen. Electric, optical and structural properties of these compounds are derived from measurements of the dark conductivity, of the I.R., optical and U.V. absorption, of Raman spectra and from studies using X-ray photoelectron spectrometry and differential scanning calorimetry. A structural model of the amorphous phosphorus nitride is presented.

Original language	English (US)
Pages (from-to)	527-547
Number of pages	21
Journal	Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume	43
Issue number	3
DOIs	https://doi.org/10.1080/01418638108222114
State	Published - Mar 1981
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Physics and Astronomy

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10.1080/01418638108222114

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title = "Preparation and properties of amorphous phosphorus nitride prepared in a low-pressure plasma",

abstract = "Thin films of amorphous P3N5 and P3N5Hx have been deposited in a low-pressure plasma either from the elements or from phosphine and nitrogen. Electric, optical and structural properties of these compounds are derived from measurements of the dark conductivity, of the I.R., optical and U.V. absorption, of Raman spectra and from studies using X-ray photoelectron spectrometry and differential scanning calorimetry. A structural model of the amorphous phosphorus nitride is presented.",

author = "S. Vep{\v r}ek and Z. Iqbal and J. Brunner and M. Sch{\"a}rli",

note = "Funding Information: ACKNOWLEDGMENT We should like to thank Professor W. E. Spear for the conductivity measurements, Mr. L. Zoller for the E.S.R. measurements, Mr. A. Portmann for technical assistance, and Professors P. Wachter and H. C. Siegmann (ETH-Z) for making the Raman and XPS spectrometers available to us. We appreciate very much stimulating discussions with Professors H. R. Oswald and J. H. Ammeter, Drs. J. Giinter, J. Gimzewski and P. Groner. This work has been supported in part by Swiss National Science Foundation and National Energy Research Foundation.",

year = "1981",

month = mar,

doi = "10.1080/01418638108222114",

language = "English (US)",

volume = "43",

pages = "527--547",

journal = "Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties",

issn = "1364-2812",

publisher = "Taylor and Francis Ltd.",

number = "3",

}

Preparation and properties of amorphous phosphorus nitride prepared in a low-pressure plasma. / Vepřek, S.; Iqbal, Z.; Brunner, J. et al.
In: Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, Vol. 43, No. 3, 03.1981, p. 527-547.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Preparation and properties of amorphous phosphorus nitride prepared in a low-pressure plasma

AU - Vepřek, S.

AU - Iqbal, Z.

AU - Brunner, J.

AU - Schärli, M.

N1 - Funding Information: ACKNOWLEDGMENT We should like to thank Professor W. E. Spear for the conductivity measurements, Mr. L. Zoller for the E.S.R. measurements, Mr. A. Portmann for technical assistance, and Professors P. Wachter and H. C. Siegmann (ETH-Z) for making the Raman and XPS spectrometers available to us. We appreciate very much stimulating discussions with Professors H. R. Oswald and J. H. Ammeter, Drs. J. Giinter, J. Gimzewski and P. Groner. This work has been supported in part by Swiss National Science Foundation and National Energy Research Foundation.

PY - 1981/3

Y1 - 1981/3

N2 - Thin films of amorphous P3N5 and P3N5Hx have been deposited in a low-pressure plasma either from the elements or from phosphine and nitrogen. Electric, optical and structural properties of these compounds are derived from measurements of the dark conductivity, of the I.R., optical and U.V. absorption, of Raman spectra and from studies using X-ray photoelectron spectrometry and differential scanning calorimetry. A structural model of the amorphous phosphorus nitride is presented.

AB - Thin films of amorphous P3N5 and P3N5Hx have been deposited in a low-pressure plasma either from the elements or from phosphine and nitrogen. Electric, optical and structural properties of these compounds are derived from measurements of the dark conductivity, of the I.R., optical and U.V. absorption, of Raman spectra and from studies using X-ray photoelectron spectrometry and differential scanning calorimetry. A structural model of the amorphous phosphorus nitride is presented.

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JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

IS - 3

ER -

Preparation and properties of amorphous phosphorus nitride prepared in a low-pressure plasma

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