Preparation and properties of amorphous phosphorus nitride prepared in a low-pressure plasma

S. Vepřek, Z. Iqbal, J. Brunner, M. Schärli

Research output: Contribution to journalArticlepeer-review

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Abstract

Thin films of amorphous P3N5 and P3N5Hx have been deposited in a low-pressure plasma either from the elements or from phosphine and nitrogen. Electric, optical and structural properties of these compounds are derived from measurements of the dark conductivity, of the I.R., optical and U.V. absorption, of Raman spectra and from studies using X-ray photoelectron spectrometry and differential scanning calorimetry. A structural model of the amorphous phosphorus nitride is presented.

Original languageEnglish (US)
Pages (from-to)527-547
Number of pages21
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume43
Issue number3
DOIs
StatePublished - Mar 1981

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Physics and Astronomy(all)

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