Preparation, properties and applications of free-standing porous silicon films

J. Von Behren, L. Tsybeskov, P. M. Fauchet

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations

Abstract

Using special electrochemical etching and lift-off steps, we have fabricated large-area free-standing porous silicon films in the thickness range from 0.1 μm to 50 μm. Their transmission is near 100% in the near infrared which is indicative of very high porosity/low index of refraction films. These optically flat and homogeneous films exhibit no surface and bulk scattering, despite the fact that they did not undergo supercritical drying. The relationship between the absorption coefficient, the luminescence spectrum, and the chemical and structural properties is examined as a function of preparation and post-treatment conditions. Because of their superior optical properties, these films are suitable for many device applications.

Original languageEnglish (US)
Pages (from-to)333-338
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume358
StatePublished - Jan 1 1995
Externally publishedYes
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 28 1994Nov 30 1994

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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