Preparing nano-hole arrays by using porous anodic aluminum oxide nano-structural masks for the enhanced emission from InGaN/GaN blue light-emitting diodes

Hoang Duy Nguyen, Hieu Pham Trung Nguyen, Jae Jin Lee, Sun Il Mho

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We report on the achievement of the enhanced cathodoluminescence (CL) from InGaN/GaN light-emitting diodes (LEDs) by using roughening surface. Nanoporous anodic aluminum oxide (AAO) mask was utilized to form nano-hole arrays on the surface of InGaN/GaN LEDs. AAO membranes with ordered hexagonal structures were fabricated from aluminum foils by a two-step anodization method. The average pore densities of ~1.0×1010 cm-2 and 3.0×1010 cm-2 were fabricated with the constant anodization voltages of 25 and 40V, respectively. Anodic porous alumina film with a thickness of ~600 nm has been used as a mask for the induced couple plasma etching process to fabricate nano-hole arrays on the LED surface. Diameter and depth of nano-holes can be controlled by varying the etching duration and/or the diameter of AAO membranes. Due to the reduction of total internal reflection obtained in the patterned samples, we have observed that the cathodoluminescence intensity of LEDs with nanoporous structures is increased up to eight times compared to that of samples without using nanoporous structure.

Original languageEnglish (US)
Article number045018
JournalAdvances in Natural Sciences: Nanoscience and Nanotechnology
Volume3
Issue number4
DOIs
StatePublished - Dec 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Keywords

  • Anodic aluminum oxide
  • Light scattering
  • Light-emitting diode
  • Nanopatterning

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