Pressure dependence of energy gap of III-V and II-VI ternary semiconductors

Dongguo Chen, N. Ravindra

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A general expression for the pressure dependence of the energy gap of a series of group III-V and group II-VI ternary semiconductors have been derived based on Van Vechten's dielectric theory. The results obtained are in good accord with the available experimental data. The trends in the variation of the pressure dependence of the energy gap with the nearest neighbor distance and Phillips ionicity are explored qualitatively.

Original languageEnglish (US)
Pages (from-to)5735-5742
Number of pages8
JournalJournal of Materials Science
Volume47
Issue number15
DOIs
StatePublished - Aug 1 2012

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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