Pressure dependence of energy gap of III-V and II-VI ternary semiconductors

Dongguo Chen; N. Ravindra

doi:10.1007/s10853-012-6464-5

Pressure dependence of energy gap of III-V and II-VI ternary semiconductors

Dongguo Chen, N. Ravindra

Physics

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16 Scopus citations

Abstract

A general expression for the pressure dependence of the energy gap of a series of group III-V and group II-VI ternary semiconductors have been derived based on Van Vechten's dielectric theory. The results obtained are in good accord with the available experimental data. The trends in the variation of the pressure dependence of the energy gap with the nearest neighbor distance and Phillips ionicity are explored qualitatively.

Original language	English (US)
Pages (from-to)	5735-5742
Number of pages	8
Journal	Journal of Materials Science
Volume	47
Issue number	15
DOIs	https://doi.org/10.1007/s10853-012-6464-5
State	Published - Aug 1 2012

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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abstract = "A general expression for the pressure dependence of the energy gap of a series of group III-V and group II-VI ternary semiconductors have been derived based on Van Vechten's dielectric theory. The results obtained are in good accord with the available experimental data. The trends in the variation of the pressure dependence of the energy gap with the nearest neighbor distance and Phillips ionicity are explored qualitatively.",

author = "Dongguo Chen and N. Ravindra",

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AU - Ravindra, N.

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N2 - A general expression for the pressure dependence of the energy gap of a series of group III-V and group II-VI ternary semiconductors have been derived based on Van Vechten's dielectric theory. The results obtained are in good accord with the available experimental data. The trends in the variation of the pressure dependence of the energy gap with the nearest neighbor distance and Phillips ionicity are explored qualitatively.

AB - A general expression for the pressure dependence of the energy gap of a series of group III-V and group II-VI ternary semiconductors have been derived based on Van Vechten's dielectric theory. The results obtained are in good accord with the available experimental data. The trends in the variation of the pressure dependence of the energy gap with the nearest neighbor distance and Phillips ionicity are explored qualitatively.

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Pressure dependence of energy gap of III-V and II-VI ternary semiconductors

Abstract

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