Pressure quenching of chain branching reactions of SiH4 and SiD4 chlorination

S. A. Chasovnikov; A. V. Chernyshev; L. N. Krasnoperov

doi:10.1016/0301-0104(90)87014-3

Pressure quenching of chain branching reactions of SiH₄ and SiD₄ chlorination

S. A. Chasovnikov, A. V. Chernyshev, L. N. Krasnoperov

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4 Scopus citations

Abstract

The process of chain branching in silane chlorination is shown to be pressure quenched (He, Cl₂) which strongly testifies to the mechanism of chain branching via energy rich molecules. Comparison between experimental data on quenching of SiH₄+Cl₂ and SiD₄+Cl₂ reactions, and calculations by RRKM theory disagree with the previously proposed branching channel - dissociation of highly excited SiH₃Cl molecules: SiH₃Cl→SiHCl+H₂. The rate constant of the reaction of chlorine atom with SiD₄ is determined to be (1.8±0.3) × 10^-10 cm³/s(±2σ) at T=298± 5 K.

Original language	English (US)
Pages (from-to)	339-346
Number of pages	8
Journal	Chemical Physics
Volume	143
Issue number	3
DOIs	https://doi.org/10.1016/0301-0104(90)87014-3
State	Published - Jun 1 1990
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1016/0301-0104(90)87014-3

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title = "Pressure quenching of chain branching reactions of SiH4 and SiD4 chlorination",

abstract = "The process of chain branching in silane chlorination is shown to be pressure quenched (He, Cl2) which strongly testifies to the mechanism of chain branching via energy rich molecules. Comparison between experimental data on quenching of SiH4+Cl2 and SiD4+Cl2 reactions, and calculations by RRKM theory disagree with the previously proposed branching channel - dissociation of highly excited SiH3Cl molecules: SiH3Cl→SiHCl+H2. The rate constant of the reaction of chlorine atom with SiD4 is determined to be (1.8±0.3) × 10-10 cm3/s(±2σ) at T=298± 5 K.",

author = "Chasovnikov, {S. A.} and Chernyshev, {A. V.} and Krasnoperov, {L. N.}",

year = "1990",

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T1 - Pressure quenching of chain branching reactions of SiH4 and SiD4 chlorination

AU - Chasovnikov, S. A.

AU - Chernyshev, A. V.

AU - Krasnoperov, L. N.

PY - 1990/6/1

Y1 - 1990/6/1

N2 - The process of chain branching in silane chlorination is shown to be pressure quenched (He, Cl2) which strongly testifies to the mechanism of chain branching via energy rich molecules. Comparison between experimental data on quenching of SiH4+Cl2 and SiD4+Cl2 reactions, and calculations by RRKM theory disagree with the previously proposed branching channel - dissociation of highly excited SiH3Cl molecules: SiH3Cl→SiHCl+H2. The rate constant of the reaction of chlorine atom with SiD4 is determined to be (1.8±0.3) × 10-10 cm3/s(±2σ) at T=298± 5 K.

AB - The process of chain branching in silane chlorination is shown to be pressure quenched (He, Cl2) which strongly testifies to the mechanism of chain branching via energy rich molecules. Comparison between experimental data on quenching of SiH4+Cl2 and SiD4+Cl2 reactions, and calculations by RRKM theory disagree with the previously proposed branching channel - dissociation of highly excited SiH3Cl molecules: SiH3Cl→SiHCl+H2. The rate constant of the reaction of chlorine atom with SiD4 is determined to be (1.8±0.3) × 10-10 cm3/s(±2σ) at T=298± 5 K.

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DO - 10.1016/0301-0104(90)87014-3

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EP - 346

JO - Chemical Physics

JF - Chemical Physics

IS - 3

ER -

Pressure quenching of chain branching reactions of SiH₄ and SiD₄ chlorination

Abstract

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