Process dependent optimization of dielectric and metal stacks for multilevel resistive random-access memory

Pengxiang Zhao; Durga Misra; Dina Triyoso; Vidya Kaushik; Kandabara Tapily; Robert D. Clark; Steven Consiglio; Cory S. Wajda; Gert J. Leusink

doi:10.1149/09703.0013ecst

Process dependent optimization of dielectric and metal stacks for multilevel resistive random-access memory

Pengxiang Zhao, Durga Misra, Dina Triyoso, Vidya Kaushik, Kandabara Tapily, Robert D. Clark, Steven Consiglio, Cory S. Wajda, Gert J. Leusink

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A HfO₂/Al₂O₃ bilayer structure for a two-terminal ReRAM device with an intention of having multiple resistance states as a function of compliance current (CC) after forming was evaluated. A reduced power consumption was observed when the Al₂O₃ buffer layer was placed between the top electrode and the HfO₂ layer as compared to when it is embedded between the HfO₂ layer and the bottom electrode. Gradual resistance change capability was observed with varying CC. The switching power requirement increases even if the Al₂O₃ buffer layer thickness was decreased when the buffer layer was near the bottom electrode. It was demonstrated that by modifying the deposition process of the top metal layer the switching energy requirement can be altered.

Original language	English (US)
Title of host publication	237th ECS Meeting
Subtitle of host publication	Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 10
Editors	H. Jagannathan, K. Kakushima, P. J. Timans, E. Gusev, Z. Karim, S. De Gendt, D. Misra, Y. S. Obeng, F. Roo
Publisher	IOP Publishing Ltd.
Pages	13-20
Number of pages	8
Edition	3
ISBN (Electronic)	9781607688914
DOIs	https://doi.org/10.1149/09703.0013ecst
State	Published - Apr 1 2020
Event	237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020 - Montreal, Canada Duration: May 10 2020 → May 14 2020

Publication series

Name	ECS Transactions
Number	3
Volume	97
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020
Country/Territory	Canada
City	Montreal
Period	5/10/20 → 5/14/20

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/09703.0013ecst

Cite this

Zhao, P., Misra, D., Triyoso, D., Kaushik, V., Tapily, K., Clark, R. D., Consiglio, S., Wajda, C. S., & Leusink, G. J. (2020). Process dependent optimization of dielectric and metal stacks for multilevel resistive random-access memory. In H. Jagannathan, K. Kakushima, P. J. Timans, E. Gusev, Z. Karim, S. De Gendt, D. Misra, Y. S. Obeng, & F. Roo (Eds.), 237th ECS Meeting: Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 10 (3 ed., pp. 13-20). (ECS Transactions; Vol. 97, No. 3). IOP Publishing Ltd.. https://doi.org/10.1149/09703.0013ecst

Zhao, Pengxiang ; Misra, Durga ; Triyoso, Dina et al. / Process dependent optimization of dielectric and metal stacks for multilevel resistive random-access memory. 237th ECS Meeting: Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 10. editor / H. Jagannathan ; K. Kakushima ; P. J. Timans ; E. Gusev ; Z. Karim ; S. De Gendt ; D. Misra ; Y. S. Obeng ; F. Roo. 3. ed. IOP Publishing Ltd., 2020. pp. 13-20 (ECS Transactions; 3).

@inproceedings{cee585ee56964a068bdb12126cc0c24c,

title = "Process dependent optimization of dielectric and metal stacks for multilevel resistive random-access memory",

abstract = "A HfO2/Al2O3 bilayer structure for a two-terminal ReRAM device with an intention of having multiple resistance states as a function of compliance current (CC) after forming was evaluated. A reduced power consumption was observed when the Al2O3 buffer layer was placed between the top electrode and the HfO2 layer as compared to when it is embedded between the HfO2 layer and the bottom electrode. Gradual resistance change capability was observed with varying CC. The switching power requirement increases even if the Al2O3 buffer layer thickness was decreased when the buffer layer was near the bottom electrode. It was demonstrated that by modifying the deposition process of the top metal layer the switching energy requirement can be altered.",

author = "Pengxiang Zhao and Durga Misra and Dina Triyoso and Vidya Kaushik and Kandabara Tapily and Clark, {Robert D.} and Steven Consiglio and Wajda, {Cory S.} and Leusink, {Gert J.}",

note = "Publisher Copyright: {\textcopyright} 2020 ECS - The Electrochemical Society.; 237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020 ; Conference date: 10-05-2020 Through 14-05-2020",

year = "2020",

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doi = "10.1149/09703.0013ecst",

language = "English (US)",

series = "ECS Transactions",

publisher = "IOP Publishing Ltd.",

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pages = "13--20",

editor = "H. Jagannathan and K. Kakushima and Timans, {P. J.} and E. Gusev and Z. Karim and {De Gendt}, S. and D. Misra and Obeng, {Y. S.} and F. Roo",

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Zhao, P, Misra, D, Triyoso, D, Kaushik, V, Tapily, K, Clark, RD, Consiglio, S, Wajda, CS & Leusink, GJ 2020, Process dependent optimization of dielectric and metal stacks for multilevel resistive random-access memory. in H Jagannathan, K Kakushima, PJ Timans, E Gusev, Z Karim, S De Gendt, D Misra, YS Obeng & F Roo (eds), 237th ECS Meeting: Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 10. 3 edn, ECS Transactions, no. 3, vol. 97, IOP Publishing Ltd., pp. 13-20, 237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020, Montreal, Canada, 5/10/20. https://doi.org/10.1149/09703.0013ecst

Process dependent optimization of dielectric and metal stacks for multilevel resistive random-access memory. / Zhao, Pengxiang; Misra, Durga; Triyoso, Dina et al.
237th ECS Meeting: Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 10. ed. / H. Jagannathan; K. Kakushima; P. J. Timans; E. Gusev; Z. Karim; S. De Gendt; D. Misra; Y. S. Obeng; F. Roo. 3. ed. IOP Publishing Ltd., 2020. p. 13-20 (ECS Transactions; Vol. 97, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Process dependent optimization of dielectric and metal stacks for multilevel resistive random-access memory

AU - Zhao, Pengxiang

AU - Misra, Durga

AU - Triyoso, Dina

AU - Kaushik, Vidya

AU - Tapily, Kandabara

AU - Clark, Robert D.

AU - Consiglio, Steven

AU - Wajda, Cory S.

AU - Leusink, Gert J.

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N2 - A HfO2/Al2O3 bilayer structure for a two-terminal ReRAM device with an intention of having multiple resistance states as a function of compliance current (CC) after forming was evaluated. A reduced power consumption was observed when the Al2O3 buffer layer was placed between the top electrode and the HfO2 layer as compared to when it is embedded between the HfO2 layer and the bottom electrode. Gradual resistance change capability was observed with varying CC. The switching power requirement increases even if the Al2O3 buffer layer thickness was decreased when the buffer layer was near the bottom electrode. It was demonstrated that by modifying the deposition process of the top metal layer the switching energy requirement can be altered.

AB - A HfO2/Al2O3 bilayer structure for a two-terminal ReRAM device with an intention of having multiple resistance states as a function of compliance current (CC) after forming was evaluated. A reduced power consumption was observed when the Al2O3 buffer layer was placed between the top electrode and the HfO2 layer as compared to when it is embedded between the HfO2 layer and the bottom electrode. Gradual resistance change capability was observed with varying CC. The switching power requirement increases even if the Al2O3 buffer layer thickness was decreased when the buffer layer was near the bottom electrode. It was demonstrated that by modifying the deposition process of the top metal layer the switching energy requirement can be altered.

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A2 - Jagannathan, H.

A2 - Kakushima, K.

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A2 - De Gendt, S.

A2 - Misra, D.

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PB - IOP Publishing Ltd.

T2 - 237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020

Y2 - 10 May 2020 through 14 May 2020

ER -

Zhao P, Misra D, Triyoso D, Kaushik V, Tapily K, Clark RD et al. Process dependent optimization of dielectric and metal stacks for multilevel resistive random-access memory. In Jagannathan H, Kakushima K, Timans PJ, Gusev E, Karim Z, De Gendt S, Misra D, Obeng YS, Roo F, editors, 237th ECS Meeting: Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 10. 3 ed. IOP Publishing Ltd. 2020. p. 13-20. (ECS Transactions; 3). doi: 10.1149/09703.0013ecst

Process dependent optimization of dielectric and metal stacks for multilevel resistive random-access memory

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