Process dependent optimization of dielectric and metal stacks for multilevel resistive random-access memory

Pengxiang Zhao, Durga Misra, Dina Triyoso, Vidya Kaushik, Kandabara Tapily, Robert D. Clark, Steven Consiglio, Cory S. Wajda, Gert J. Leusink

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A HfO2/Al2O3 bilayer structure for a two-terminal ReRAM device with an intention of having multiple resistance states as a function of compliance current (CC) after forming was evaluated. A reduced power consumption was observed when the Al2O3 buffer layer was placed between the top electrode and the HfO2 layer as compared to when it is embedded between the HfO2 layer and the bottom electrode. Gradual resistance change capability was observed with varying CC. The switching power requirement increases even if the Al2O3 buffer layer thickness was decreased when the buffer layer was near the bottom electrode. It was demonstrated that by modifying the deposition process of the top metal layer the switching energy requirement can be altered.

Original languageEnglish (US)
Title of host publication237th ECS Meeting
Subtitle of host publicationSilicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 10
EditorsH. Jagannathan, K. Kakushima, P. J. Timans, E. Gusev, Z. Karim, S. De Gendt, D. Misra, Y. S. Obeng, F. Roo
PublisherInstitute of Physics Publishing
Pages13-20
Number of pages8
Edition3
ISBN (Electronic)9781607685395
DOIs
StatePublished - Apr 1 2020
Event237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020 - Montreal, Canada
Duration: May 10 2020May 14 2020

Publication series

NameECS Transactions
Number3
Volume97
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020
Country/TerritoryCanada
CityMontreal
Period5/10/205/14/20

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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