Process dependent optimization of dielectric and metal stacks for multilevel resistive random-access memory

Keyphrases

• HfO2 100%
• Resistive Random Access Memory (ReRAM) 100%
• Dielectric Stack 100%
• Metal Stack 100%
• Process-dependent 100%
• Compliance Current 66%
• Bottom Electrode 66%
• Switching Energy 66%
• Al2O3 Buffer Layer 66%
• Energy Consumption Reduction 33%
• Energy Requirement 33%
• Power Requirement 33%
• Deposition Process 33%
• Aluminum Oxide 33%
• Resistance to Change 33%
• Two-terminal 33%
• Metal Layer 33%
• Buffer Layer Thickness 33%
• Resistive State 33%
• Top Electrode 33%
• Buffer Layer 33%
• Bilayer Structure 33%
• Varying Compliance 33%
• ReRAM Devices 33%
• Multiple Resistance 33%
• Change Capability 33%

Engineering

• Dielectrics 100%
• Resistive Random Access Memory 100%
• Buffer Layer 100%
• Dependent Process 100%
• Electric Power Utilization 33%
• Power Requirement 33%
• Layer Thickness 33%
• Energy Requirement 33%
• Deposition Process 33%
• Resistance Change 33%
• Metal Layer 33%

Material Science

• Dielectric Material 100%
• Resistive Random-Access Memory 100%
• Al2O3 100%
• Buffer Layer 100%