Processing & characterization of thin films of Sio2 on Si for integrated circuits

N. M. Ravindra; W. N. Carr; O. L. Russo; D. Fathy; A. R. Heyd; K. Vedam; J. Narayan

doi:10.1117/12.947395

Processing & characterization of thin films of Sio₂ on Si for integrated circuits

N. M. Ravindra, W. N. Carr, O. L. Russo, D. Fathy, A. R. Heyd, K. Vedam, J. Narayan

Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Experimental studies of the low temperature (800° C) processing and characterization of thermally grown films of SiO₂ on Si in the thickness range of 1 to 20 nm is reported here. Breakdown voltage, High Resolution Transmission Electron Microscopy (HRTEM), Electrolyte Electro Reflectance (EER), single wavelength and Spectroscopic Ellipsometry (SE) techniques have been employed to characterize these films. Nearly Free Electron (NFE) model such as that of Penn is then employed to interpret the energies corresponding to the peak in the EER & SE spectra.

Original language	English (US)
Pages (from-to)	84-96
Number of pages	13
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	945
DOIs	https://doi.org/10.1117/12.947395
State	Published - Aug 16 1988

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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abstract = "Experimental studies of the low temperature (800° C) processing and characterization of thermally grown films of SiO2 on Si in the thickness range of 1 to 20 nm is reported here. Breakdown voltage, High Resolution Transmission Electron Microscopy (HRTEM), Electrolyte Electro Reflectance (EER), single wavelength and Spectroscopic Ellipsometry (SE) techniques have been employed to characterize these films. Nearly Free Electron (NFE) model such as that of Penn is then employed to interpret the energies corresponding to the peak in the EER & SE spectra.",

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AU - Ravindra, N. M.

AU - Carr, W. N.

AU - Russo, O. L.

AU - Fathy, D.

AU - Heyd, A. R.

AU - Vedam, K.

AU - Narayan, J.

PY - 1988/8/16

Y1 - 1988/8/16

N2 - Experimental studies of the low temperature (800° C) processing and characterization of thermally grown films of SiO2 on Si in the thickness range of 1 to 20 nm is reported here. Breakdown voltage, High Resolution Transmission Electron Microscopy (HRTEM), Electrolyte Electro Reflectance (EER), single wavelength and Spectroscopic Ellipsometry (SE) techniques have been employed to characterize these films. Nearly Free Electron (NFE) model such as that of Penn is then employed to interpret the energies corresponding to the peak in the EER & SE spectra.

AB - Experimental studies of the low temperature (800° C) processing and characterization of thermally grown films of SiO2 on Si in the thickness range of 1 to 20 nm is reported here. Breakdown voltage, High Resolution Transmission Electron Microscopy (HRTEM), Electrolyte Electro Reflectance (EER), single wavelength and Spectroscopic Ellipsometry (SE) techniques have been employed to characterize these films. Nearly Free Electron (NFE) model such as that of Penn is then employed to interpret the energies corresponding to the peak in the EER & SE spectra.

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Processing & characterization of thin films of Sio₂ on Si for integrated circuits

Abstract

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