Processing & characterization of thin films of Sio2 on Si for integrated circuits

N. M. Ravindra, W. N. Carr, O. L. Russo, D. Fathy, A. R. Heyd, K. Vedam, J. Narayan

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Experimental studies of the low temperature (800° C) processing and characterization of thermally grown films of SiO2 on Si in the thickness range of 1 to 20 nm is reported here. Breakdown voltage, High Resolution Transmission Electron Microscopy (HRTEM), Electrolyte Electro Reflectance (EER), single wavelength and Spectroscopic Ellipsometry (SE) techniques have been employed to characterize these films. Nearly Free Electron (NFE) model such as that of Penn is then employed to interpret the energies corresponding to the peak in the EER & SE spectra.

Original languageEnglish (US)
Pages (from-to)84-96
Number of pages13
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - Aug 16 1988

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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