Processing for highly emissive CZ-silicon by depositing stressed sol-gel films

Keyphrases

• Erbium 100%
• Sol-gel Film 100%
• Silica Film 100%
• Cz Silicon 100%
• Highly Emissive 100%
• Oxides 50%
• Band Gap 50%
• Silicon Substrate 50%
• Nitrate 50%
• Annealing 50%
• Strong Correlation 50%
• Emission Band 50%
• Annealing Temperature 50%
• Erbium Ions 50%
• Tetraethyl Orthosilicate 50%
• Infrared Emission 50%
• Rare Earth 50%
• Photoluminescence Studies 50%
• Sol-gel Process 50%
• Steady-state Photoluminescence 50%
• Annealed Films 50%
• Band-gap Emission 50%
• Active Dopants 50%
• Czochralski Silicon 50%

Material Science

• Film 100%
• Silicon 100%
• Sol-Gel 100%
• Erbium 60%
• Silicon Dioxide 40%
• Oxide Compound 20%
• Doping (Additives) 20%
• Photoluminescence 20%
• Tetraethyl Orthosilicate 20%

Chemical Engineering

• Erbium 100%