Progressive breakdown characteristics of high-K/metal gate stacks

G. Bersuker, N. Chowdhury, C. Young, D. Heh, Durgamadhab Misra, R. Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

43 Scopus citations

Abstract

Breakdown characteristics of Hf-based bigh-k dielectrics in a wide thickness range were investigated to identify the "weak link" in the gate stack and its leading breakdown mechanisms under inversion stress. A strong correlation among the growth rates of the stress leakage current, SILC, and interface trap density suggests that breakdown is triggered by trap generation in the interfacial SiO2 layer. Stress-time evolution of the differential resistance and its slope obtained from SILC data allows progressive breakdown in high-k/metal gate stacks to be identified.

Original languageEnglish (US)
Title of host publication2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual
Pages49-54
Number of pages6
DOIs
StatePublished - Sep 25 2007
Event45th Annual IEEE International Reliability Physics Symposium 2007, IRPS - Phoenix, AZ, United States
Duration: Apr 15 2007Apr 19 2007

Other

Other45th Annual IEEE International Reliability Physics Symposium 2007, IRPS
Country/TerritoryUnited States
CityPhoenix, AZ
Period4/15/074/19/07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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