@inproceedings{54c8b40442644c42b0f2edf9ad13db32,
title = "Progressive breakdown characteristics of high-K/metal gate stacks",
abstract = "Breakdown characteristics of Hf-based bigh-k dielectrics in a wide thickness range were investigated to identify the {"}weak link{"} in the gate stack and its leading breakdown mechanisms under inversion stress. A strong correlation among the growth rates of the stress leakage current, SILC, and interface trap density suggests that breakdown is triggered by trap generation in the interfacial SiO2 layer. Stress-time evolution of the differential resistance and its slope obtained from SILC data allows progressive breakdown in high-k/metal gate stacks to be identified.",
keywords = "Breakdown, High-k, Trap generation",
author = "G. Bersuker and N. Chowdhury and C. Young and D. Heh and D. Misra and R. Choi",
year = "2007",
doi = "10.1109/RELPHY.2007.369867",
language = "English (US)",
isbn = "1424409195",
series = "Annual Proceedings - Reliability Physics (Symposium)",
pages = "49--54",
booktitle = "2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual",
note = "45th Annual IEEE International Reliability Physics Symposium 2007, IRPS ; Conference date: 15-04-2007 Through 19-04-2007",
}