Properties of hydrogenated amorphous silicon prepared by chemical vapor deposition from higher silanes

A. E. Delahoy

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A review is given of the optical, electronic and device properties of hydrogenated amorphous silicon (a-Si:H) prepared by chemical vapor deposition (CVD) from higher order silanes. Prepared in this way, a-Si:H possesses a smaller energy gap than its counterpart prepared by glow discharge (GD) techniques, and thus is a potentially interesting material for photovoltaic solar energy conversion. Topics discussed are the deposition mechanism, hydrogen concentration and bonding, the optical energy gap, dark conductivity and photoconductivity, sub-bandgap absorption, the effect of hydrogen plasma treatment, doping properties, gap states, and photovoltaic devices.

Original languageEnglish (US)
Pages (from-to)47-55
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume407
DOIs
StatePublished - Sep 8 1986

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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