Abstract
A review is given of the optical, electronic and device properties of hydrogenated amorphous silicon (a-Si:H) prepared by chemical vapor deposition (CVD) from higher order silanes. Prepared in this way, a-Si:H possesses a smaller energy gap than its counterpart prepared by glow discharge (GD) techniques, and thus is a potentially interesting material for photovoltaic solar energy conversion. Topics discussed are the deposition mechanism, hydrogen concentration and bonding, the optical energy gap, dark conductivity and photoconductivity, sub-bandgap absorption, the effect of hydrogen plasma treatment, doping properties, gap states, and photovoltaic devices.
Original language | English (US) |
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Pages (from-to) | 47-55 |
Number of pages | 9 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 407 |
DOIs | |
State | Published - Sep 8 1986 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering