Polycrystalline silicon films have been prepared using chemical transport in a low-pressure plasma in a temperature range 80-400 degrees C and at deposition rates up to approximately 3 AA s-1. Their Raman spectra show several features which are correlated with X-ray diffraction measurements and attributed to the presence of crystalline and amorphous-like components. Optical absorption, infrared spectra, preliminary data on dark conductivity and some further properties are reported.
|Original language||English (US)|
|Number of pages||14|
|Journal||Journal of Physics C: Solid State Physics|
|State||Published - Jan 1 1981|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)