Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees C

S. Veprek, Z. Iqbal, H. R. Oswald, A. P. Webb

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155 Scopus citations

Abstract

Polycrystalline silicon films have been prepared using chemical transport in a low-pressure plasma in a temperature range 80-400 degrees C and at deposition rates up to approximately 3 AA s-1. Their Raman spectra show several features which are correlated with X-ray diffraction measurements and attributed to the presence of crystalline and amorphous-like components. Optical absorption, infrared spectra, preliminary data on dark conductivity and some further properties are reported.

Original languageEnglish (US)
Article number013
Pages (from-to)295-308
Number of pages14
JournalJournal of Physics C: Solid State Physics
Volume14
Issue number3
DOIs
StatePublished - Jan 1 1981

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Engineering(all)
  • Physics and Astronomy(all)

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