Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees C

S. Veprek; Z. Iqbal; H. R. Oswald; A. P. Webb

doi:10.1088/0022-3719/14/3/013

Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees C

S. Veprek, Z. Iqbal, H. R. Oswald, A. P. Webb

Research output: Contribution to journal › Article › peer-review

157 Scopus citations

Abstract

Polycrystalline silicon films have been prepared using chemical transport in a low-pressure plasma in a temperature range 80-400 degrees C and at deposition rates up to approximately 3 AA s^-1. Their Raman spectra show several features which are correlated with X-ray diffraction measurements and attributed to the presence of crystalline and amorphous-like components. Optical absorption, infrared spectra, preliminary data on dark conductivity and some further properties are reported.

Original language	English (US)
Article number	013
Pages (from-to)	295-308
Number of pages	14
Journal	Journal of Physics C: Solid State Physics
Volume	14
Issue number	3
DOIs	https://doi.org/10.1088/0022-3719/14/3/013
State	Published - 1981
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
General Engineering
General Physics and Astronomy

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10.1088/0022-3719/14/3/013

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abstract = "Polycrystalline silicon films have been prepared using chemical transport in a low-pressure plasma in a temperature range 80-400 degrees C and at deposition rates up to approximately 3 AA s-1. Their Raman spectra show several features which are correlated with X-ray diffraction measurements and attributed to the presence of crystalline and amorphous-like components. Optical absorption, infrared spectra, preliminary data on dark conductivity and some further properties are reported.",

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year = "1981",

doi = "10.1088/0022-3719/14/3/013",

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AU - Veprek, S.

AU - Iqbal, Z.

AU - Oswald, H. R.

AU - Webb, A. P.

PY - 1981

Y1 - 1981

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AB - Polycrystalline silicon films have been prepared using chemical transport in a low-pressure plasma in a temperature range 80-400 degrees C and at deposition rates up to approximately 3 AA s-1. Their Raman spectra show several features which are correlated with X-ray diffraction measurements and attributed to the presence of crystalline and amorphous-like components. Optical absorption, infrared spectra, preliminary data on dark conductivity and some further properties are reported.

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Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees C

Abstract

All Science Journal Classification (ASJC) codes

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