Abstract
Polycrystalline silicon films have been prepared using chemical transport in a low-pressure plasma in a temperature range 80-400 degrees C and at deposition rates up to approximately 3 AA s-1. Their Raman spectra show several features which are correlated with X-ray diffraction measurements and attributed to the presence of crystalline and amorphous-like components. Optical absorption, infrared spectra, preliminary data on dark conductivity and some further properties are reported.
| Original language | English (US) |
|---|---|
| Article number | 013 |
| Pages (from-to) | 295-308 |
| Number of pages | 14 |
| Journal | Journal of Physics C: Solid State Physics |
| Volume | 14 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1981 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- General Engineering
- General Physics and Astronomy
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