Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees C

Engineering & Materials Science

• Crystalline materials 69%
• Deposition rates 84%
• Hydrogen 52%
• Infrared radiation 57%
• Light absorption 100%
• Plasmas 60%
• Polysilicon 76%
• Raman scattering 96%
• Temperature 26%
• X ray diffraction 65%

Physics & Astronomy

• conductivity 43%
• diffraction 35%
• hydrogen plasma 75%
• infrared spectra 63%
• low pressure 55%
• optical absorption 56%
• Raman spectra 50%
• silicon 35%
• silicon films 70%
• temperature 19%
• x rays 29%

Chemical Compounds

• Conductivity 44%
• Hydrogen 33%
• Liquid Film 31%
• Plasma 41%
• Polycrystalline Solid 59%
• Raman Spectrum 53%
• X-Ray Diffraction 32%