Properties of ultrathin films of porous silicon

J. von Behren, K. B. Ucer, Leonid Tsybeskov, Ju V. Vandyshev, P. M. Fauchet

Research output: Contribution to journalConference articlepeer-review

12 Scopus citations

Abstract

We have produced films of light emitting porous silicon (LEPSi) thinner than 1 μm, lifted them off the silicon wafer by an electropolishing step, and deposited them onto sapphire windows where they remain attached by van der Waals or electrostatic forces. Although free-standing LEPSi films had been obtained before, our films are one order of magnitude thinner, luminesce strongly, and have excellent mechanical properties because of the sapphire substrate. The important steps in this procedure are discussed, and the structural, chemical, and optical properties of these films as measured using a variety of probes are reported. These films are semitransparent in the visible and thus make several new optical measurements possible. In particular, the results of photoinduced absorption measurements performed with 100 fs time resolution are presented.

Original languageEnglish (US)
Pages (from-to)1225-1229
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume13
Issue number3
DOIs
StatePublished - May 1 1995
Externally publishedYes
EventProceedings of the 3rd International Conference on Nanometer-Scale Science and Technology - Denver, CO, USA
Duration: Oct 24 1994Oct 28 1994

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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