Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si

Z. Mi; Hieu Nguyen; K. Cui; X. Han; S. Zhang; Y. L. Chang

doi:10.1117/12.870760

Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si

Z. Mi, Hieu Nguyen, K. Cui, X. Han, S. Zhang, Y. L. Chang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We report on the molecular beam epitaxial growth and characterization of In(Ga)N nanowires on Si(111) substrates. We also describe the growth and optical properties of InGaN/GaN dot-in-a-wire heterostructures on Si(111) substrates with emission in the green, yellow, and red wavelength range. The design, fabrication, and characterization of In(Ga)N nanowire solar cells and LEDs are discussed. InN p-i-n axial nanowire homojunction solar cells exhibit a promising short-circuit current density of - 14.4 mA/cm² and an energy conversion efficiency of - 0.68% under 1-sun, AM1.5G illumination. Strong green, yellow, and amber emission has also been achieved from InGaN/GaN dot-in-a-wire LEDs at room temperature.

Original language	English (US)
Title of host publication	Optoelectronic Devices and Integration III
Volume	7847
DOIs	https://doi.org/10.1117/12.870760
State	Published - Dec 1 2010
Externally published	Yes
Event	Optoelectronic Devices and Integration III - Beijing, China Duration: Oct 18 2010 → Oct 20 2010

Other

Other	Optoelectronic Devices and Integration III
Country/Territory	China
City	Beijing
Period	10/18/10 → 10/20/10

All Science Journal Classification (ASJC) codes

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1117/12.870760

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@inproceedings{d87ce55084774d7087dc28bd4dbd6754,

title = "Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si",

abstract = "We report on the molecular beam epitaxial growth and characterization of In(Ga)N nanowires on Si(111) substrates. We also describe the growth and optical properties of InGaN/GaN dot-in-a-wire heterostructures on Si(111) substrates with emission in the green, yellow, and red wavelength range. The design, fabrication, and characterization of In(Ga)N nanowire solar cells and LEDs are discussed. InN p-i-n axial nanowire homojunction solar cells exhibit a promising short-circuit current density of - 14.4 mA/cm2 and an energy conversion efficiency of - 0.68% under 1-sun, AM1.5G illumination. Strong green, yellow, and amber emission has also been achieved from InGaN/GaN dot-in-a-wire LEDs at room temperature.",

author = "Z. Mi and Hieu Nguyen and K. Cui and X. Han and S. Zhang and Chang, {Y. L.}",

year = "2010",

month = dec,

day = "1",

doi = "10.1117/12.870760",

language = "English (US)",

isbn = "9780819483775",

volume = "7847",

booktitle = "Optoelectronic Devices and Integration III",

note = "Optoelectronic Devices and Integration III ; Conference date: 18-10-2010 Through 20-10-2010",

}

TY - GEN

T1 - Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si

AU - Mi, Z.

AU - Nguyen, Hieu

AU - Cui, K.

AU - Han, X.

AU - Zhang, S.

AU - Chang, Y. L.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We report on the molecular beam epitaxial growth and characterization of In(Ga)N nanowires on Si(111) substrates. We also describe the growth and optical properties of InGaN/GaN dot-in-a-wire heterostructures on Si(111) substrates with emission in the green, yellow, and red wavelength range. The design, fabrication, and characterization of In(Ga)N nanowire solar cells and LEDs are discussed. InN p-i-n axial nanowire homojunction solar cells exhibit a promising short-circuit current density of - 14.4 mA/cm2 and an energy conversion efficiency of - 0.68% under 1-sun, AM1.5G illumination. Strong green, yellow, and amber emission has also been achieved from InGaN/GaN dot-in-a-wire LEDs at room temperature.

AB - We report on the molecular beam epitaxial growth and characterization of In(Ga)N nanowires on Si(111) substrates. We also describe the growth and optical properties of InGaN/GaN dot-in-a-wire heterostructures on Si(111) substrates with emission in the green, yellow, and red wavelength range. The design, fabrication, and characterization of In(Ga)N nanowire solar cells and LEDs are discussed. InN p-i-n axial nanowire homojunction solar cells exhibit a promising short-circuit current density of - 14.4 mA/cm2 and an energy conversion efficiency of - 0.68% under 1-sun, AM1.5G illumination. Strong green, yellow, and amber emission has also been achieved from InGaN/GaN dot-in-a-wire LEDs at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=78650905553&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650905553&partnerID=8YFLogxK

U2 - 10.1117/12.870760

DO - 10.1117/12.870760

M3 - Conference contribution

AN - SCOPUS:78650905553

SN - 9780819483775

VL - 7847

BT - Optoelectronic Devices and Integration III

T2 - Optoelectronic Devices and Integration III

Y2 - 18 October 2010 through 20 October 2010

ER -

Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si

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