Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si

Z. Mi, Hieu Nguyen, K. Cui, X. Han, S. Zhang, Y. L. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We report on the molecular beam epitaxial growth and characterization of In(Ga)N nanowires on Si(111) substrates. We also describe the growth and optical properties of InGaN/GaN dot-in-a-wire heterostructures on Si(111) substrates with emission in the green, yellow, and red wavelength range. The design, fabrication, and characterization of In(Ga)N nanowire solar cells and LEDs are discussed. InN p-i-n axial nanowire homojunction solar cells exhibit a promising short-circuit current density of - 14.4 mA/cm2 and an energy conversion efficiency of - 0.68% under 1-sun, AM1.5G illumination. Strong green, yellow, and amber emission has also been achieved from InGaN/GaN dot-in-a-wire LEDs at room temperature.

Original languageEnglish (US)
Title of host publicationOptoelectronic Devices and Integration III
Volume7847
DOIs
StatePublished - Dec 1 2010
Externally publishedYes
EventOptoelectronic Devices and Integration III - Beijing, China
Duration: Oct 18 2010Oct 20 2010

Other

OtherOptoelectronic Devices and Integration III
CountryChina
CityBeijing
Period10/18/1010/20/10

All Science Journal Classification (ASJC) codes

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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