@inproceedings{d87ce55084774d7087dc28bd4dbd6754,
title = "Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si",
abstract = "We report on the molecular beam epitaxial growth and characterization of In(Ga)N nanowires on Si(111) substrates. We also describe the growth and optical properties of InGaN/GaN dot-in-a-wire heterostructures on Si(111) substrates with emission in the green, yellow, and red wavelength range. The design, fabrication, and characterization of In(Ga)N nanowire solar cells and LEDs are discussed. InN p-i-n axial nanowire homojunction solar cells exhibit a promising short-circuit current density of - 14.4 mA/cm2 and an energy conversion efficiency of - 0.68% under 1-sun, AM1.5G illumination. Strong green, yellow, and amber emission has also been achieved from InGaN/GaN dot-in-a-wire LEDs at room temperature.",
keywords = "indium nitride, monolithic integration, nanowire, solar cell",
author = "Z. Mi and Nguyen, {H. P.T.} and K. Cui and X. Han and S. Zhang and Chang, {Y. L.}",
year = "2010",
doi = "10.1117/12.870760",
language = "English (US)",
isbn = "9780819483775",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Optoelectronic Devices and Integration III",
note = "Optoelectronic Devices and Integration III ; Conference date: 18-10-2010 Through 20-10-2010",
}