Pulsed-laser deposition of Si nanoclusters

S. Vijayalakshmi, M. A. George, J. Sturmann, H. Grebel

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

Growth properties of thin films of Si nanoclusters that were deposited on Si wafers by use of pulsed-laser ablation are discussed. The films were characterized by Atomic Force Microscopy (AFM) and X-ray Diffraction (XRD) and FTIR spectroscopy. Large nonlinear optical absorption was measured using a Free-Electron Laser at wavelengths near the infrared absorption band centered at 9.8 μm.

Original languageEnglish (US)
Pages (from-to)378-382
Number of pages5
JournalApplied Surface Science
Volume127-129
DOIs
StatePublished - May 1998

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Keywords

  • Nonlinear optical properties
  • Pulsed-laser deposition
  • Si nanoclusters

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