Abstract
Growth properties of thin films of Si nanoclusters that were deposited on Si wafers by use of pulsed-laser ablation are discussed. The films were characterized by Atomic Force Microscopy (AFM) and X-ray Diffraction (XRD) and FTIR spectroscopy. Large nonlinear optical absorption was measured using a Free-Electron Laser at wavelengths near the infrared absorption band centered at 9.8 μm.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 378-382 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 127-129 |
| DOIs | |
| State | Published - May 1998 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Keywords
- Nonlinear optical properties
- Pulsed-laser deposition
- Si nanoclusters