Quantitative analysis of Raman spectra in Si/SiGe nanostructures

Selina Mala, Leonid Tsybeskov, Jean Marc Baribeau, Xiaohua Wu, David J. Lockwood

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We present comprehensive quantitative analysis of Raman spectra in two-(Si/SiGe superlattices) and three-(Si/SiGe cluster multilayers) dimensional nanostructures. We find that the Raman spectra baseline is due to the sample surface imperfection and instrumental response associated with the stray light. The Raman signal intensity is analyzed, and Ge composition is calculated and compared with the experimental data. The local sample temperature and thermal conductivity are calculated, and the spectrum of longitudinal acoustic phonons is explained.

Original languageEnglish (US)
Title of host publicationGroup IV Semiconductor Nanostructures and Applications
PublisherMaterials Research Society
Number of pages6
ISBN (Print)9781632661036
StatePublished - 2013
Event2012 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 25 2012Nov 30 2012

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2012 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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