@inproceedings{70ccddfc3ed04b43904bf0df5683eb2f,
title = "Quantitative analysis of Raman spectra in Si/SiGe nanostructures",
abstract = "We present comprehensive quantitative analysis of Raman spectra in two-(Si/SiGe superlattices) and three-(Si/SiGe cluster multilayers) dimensional nanostructures. We find that the Raman spectra baseline is due to the sample surface imperfection and instrumental response associated with the stray light. The Raman signal intensity is analyzed, and Ge composition is calculated and compared with the experimental data. The local sample temperature and thermal conductivity are calculated, and the spectrum of longitudinal acoustic phonons is explained.",
author = "Selina Mala and Leonid Tsybeskov and Baribeau, {Jean Marc} and Xiaohua Wu and Lockwood, {David J.}",
year = "2013",
doi = "10.1557/opl.2013.271",
language = "English (US)",
isbn = "9781632661036",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "1--6",
booktitle = "Group IV Semiconductor Nanostructures and Applications",
address = "United States",
note = "2012 MRS Fall Meeting ; Conference date: 25-11-2012 Through 30-11-2012",
}