Quantum confinement in nanocrystalline Si superlattices

G. F. Grom, P. M. Fauchet, L. Tsybeskov

Research output: Contribution to journalConference articlepeer-review


Photoconductance spectroscopy was used to probe the effects of quantum confinement in nanocrystalline (nc)-Si/amorphous (a)-SiO2 superlattices (SLs). A Metal-Oxide-Semiconductor (MOS)-like structure with the nc-Si SL incorporated in the oxide was fabricated to study charging/discharging processes in Si nanocrystals. The fine structure observed in photoconductance spectra at low temperatures was interpreted in terms of singularities in the carrier density of states, possibly due to energy quantization. In addition, a low-resistance sample exhibited photocurrent oscillations with a frequency of several kHz, which could be a manifestation of sequential resonant carrier tunneling in the nc-Si/a-SiO2 SL.

Original languageEnglish (US)
Pages (from-to)363-368
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2000
Externally publishedYes
EventStructure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures - Boston, MA, USA
Duration: Nov 29 1999Dec 1 1999

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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