Raman and optical spectroscopy of nanocrystalline silicon films

Z. Iqbal, S. Veprek

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The characterization of plasma-assisted CVD thin films of nanocrystalline (nc)-silicon using Raman and optical spectroscopy, is described. Characteristic variations of the frequency and linewidth of the Γ25, Raman-active mode of silicon occur due to phonon localization in the quasi-isolated crystallites. In addition, a grain-boundary mode and variable Raman and elastic scattering intensity enhancement at the grain boundary regions, have been observed. The light scattering enhancement scales very well, as a function of average crystallite size and compressive stress in the films, with the optical absorption coefficient and the intensity of the x-ray diffraction component attributed to the expanded grain boundary regions. The finite crystallite size effect in nc-silicon is compared briefly with Raman results on semiconducting, nc-selenium particles.

Original languageEnglish (US)
Pages (from-to)179-182
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume794
DOIs
StatePublished - Apr 22 1987

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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