Raman and optical spectroscopy of nanocrystalline silicon films

Z. Iqbal; S. Veprek

doi:10.1117/12.940911

Raman and optical spectroscopy of nanocrystalline silicon films

Z. Iqbal, S. Veprek

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The characterization of plasma-assisted CVD thin films of nanocrystalline (nc)-silicon using Raman and optical spectroscopy, is described. Characteristic variations of the frequency and linewidth of the Γ25, Raman-active mode of silicon occur due to phonon localization in the quasi-isolated crystallites. In addition, a grain-boundary mode and variable Raman and elastic scattering intensity enhancement at the grain boundary regions, have been observed. The light scattering enhancement scales very well, as a function of average crystallite size and compressive stress in the films, with the optical absorption coefficient and the intensity of the x-ray diffraction component attributed to the expanded grain boundary regions. The finite crystallite size effect in nc-silicon is compared briefly with Raman results on semiconducting, nc-selenium particles.

Original language	English (US)
Pages (from-to)	179-182
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	794
DOIs	https://doi.org/10.1117/12.940911
State	Published - Apr 22 1987
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.940911

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title = "Raman and optical spectroscopy of nanocrystalline silicon films",

abstract = "The characterization of plasma-assisted CVD thin films of nanocrystalline (nc)-silicon using Raman and optical spectroscopy, is described. Characteristic variations of the frequency and linewidth of the Γ25, Raman-active mode of silicon occur due to phonon localization in the quasi-isolated crystallites. In addition, a grain-boundary mode and variable Raman and elastic scattering intensity enhancement at the grain boundary regions, have been observed. The light scattering enhancement scales very well, as a function of average crystallite size and compressive stress in the films, with the optical absorption coefficient and the intensity of the x-ray diffraction component attributed to the expanded grain boundary regions. The finite crystallite size effect in nc-silicon is compared briefly with Raman results on semiconducting, nc-selenium particles.",

author = "Z. Iqbal and S. Veprek",

note = "Funding Information: We would like to thank F.A. Sarott for the preparation of the nc-Si films and his help with the XRD measurements. We would also like to thank the Swiss National Energy Foundation for partial support of this research.",

year = "1987",

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doi = "10.1117/12.940911",

language = "English (US)",

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T1 - Raman and optical spectroscopy of nanocrystalline silicon films

AU - Iqbal, Z.

AU - Veprek, S.

N1 - Funding Information: We would like to thank F.A. Sarott for the preparation of the nc-Si films and his help with the XRD measurements. We would also like to thank the Swiss National Energy Foundation for partial support of this research.

PY - 1987/4/22

Y1 - 1987/4/22

N2 - The characterization of plasma-assisted CVD thin films of nanocrystalline (nc)-silicon using Raman and optical spectroscopy, is described. Characteristic variations of the frequency and linewidth of the Γ25, Raman-active mode of silicon occur due to phonon localization in the quasi-isolated crystallites. In addition, a grain-boundary mode and variable Raman and elastic scattering intensity enhancement at the grain boundary regions, have been observed. The light scattering enhancement scales very well, as a function of average crystallite size and compressive stress in the films, with the optical absorption coefficient and the intensity of the x-ray diffraction component attributed to the expanded grain boundary regions. The finite crystallite size effect in nc-silicon is compared briefly with Raman results on semiconducting, nc-selenium particles.

AB - The characterization of plasma-assisted CVD thin films of nanocrystalline (nc)-silicon using Raman and optical spectroscopy, is described. Characteristic variations of the frequency and linewidth of the Γ25, Raman-active mode of silicon occur due to phonon localization in the quasi-isolated crystallites. In addition, a grain-boundary mode and variable Raman and elastic scattering intensity enhancement at the grain boundary regions, have been observed. The light scattering enhancement scales very well, as a function of average crystallite size and compressive stress in the films, with the optical absorption coefficient and the intensity of the x-ray diffraction component attributed to the expanded grain boundary regions. The finite crystallite size effect in nc-silicon is compared briefly with Raman results on semiconducting, nc-selenium particles.

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Raman and optical spectroscopy of nanocrystalline silicon films

Abstract

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