We present a quantitative analysis of Raman scattering in various Si/Si1-xGex multilayered nanostructures with well-defined Ge composition (x) and layer thicknesses. Using Raman and transmission electron microscopy data, we discuss and model Si/SiGe intermixing and strain. By analyzing Stokes and anti-Stokes Raman signals, we calculate temperature and discuss heat dissipation in the samples under intense laser illumination.
|Original language||English (US)|
|Journal||Journal of Applied Physics|
|State||Published - Jul 7 2014|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)