Abstract
We present a quantitative analysis of Raman scattering in various Si/Si1-xGex multilayered nanostructures with well-defined Ge composition (x) and layer thicknesses. Using Raman and transmission electron microscopy data, we discuss and model Si/SiGe intermixing and strain. By analyzing Stokes and anti-Stokes Raman signals, we calculate temperature and discuss heat dissipation in the samples under intense laser illumination.
Original language | English (US) |
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Article number | 014305 |
Journal | Journal of Applied Physics |
Volume | 116 |
Issue number | 1 |
DOIs | |
State | Published - Jul 7 2014 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy