Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation

S. A. Mala, L. Tsybeskov, D. J. Lockwood, X. Wu, J. M. Baribeau

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We present a quantitative analysis of Raman scattering in various Si/Si1-xGex multilayered nanostructures with well-defined Ge composition (x) and layer thicknesses. Using Raman and transmission electron microscopy data, we discuss and model Si/SiGe intermixing and strain. By analyzing Stokes and anti-Stokes Raman signals, we calculate temperature and discuss heat dissipation in the samples under intense laser illumination.

Original languageEnglish (US)
Article number014305
JournalJournal of Applied Physics
Volume116
Issue number1
DOIs
StatePublished - Jul 7 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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