Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation

S. A. Mala; L. Tsybeskov; D. J. Lockwood; X. Wu; J. M. Baribeau

doi:10.1063/1.4886598

Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation

S. A. Mala, L. Tsybeskov, D. J. Lockwood, X. Wu, J. M. Baribeau

Electrical and Computer Engineering

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16 Scopus citations

Abstract

We present a quantitative analysis of Raman scattering in various Si/Si_1-xGe_x multilayered nanostructures with well-defined Ge composition (x) and layer thicknesses. Using Raman and transmission electron microscopy data, we discuss and model Si/SiGe intermixing and strain. By analyzing Stokes and anti-Stokes Raman signals, we calculate temperature and discuss heat dissipation in the samples under intense laser illumination.

Original language	English (US)
Article number	014305
Journal	Journal of Applied Physics
Volume	116
Issue number	1
DOIs	https://doi.org/10.1063/1.4886598
State	Published - Jul 7 2014

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.4886598

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abstract = "We present a quantitative analysis of Raman scattering in various Si/Si1-xGex multilayered nanostructures with well-defined Ge composition (x) and layer thicknesses. Using Raman and transmission electron microscopy data, we discuss and model Si/SiGe intermixing and strain. By analyzing Stokes and anti-Stokes Raman signals, we calculate temperature and discuss heat dissipation in the samples under intense laser illumination.",

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AU - Mala, S. A.

AU - Tsybeskov, L.

AU - Lockwood, D. J.

AU - Wu, X.

AU - Baribeau, J. M.

PY - 2014/7/7

Y1 - 2014/7/7

N2 - We present a quantitative analysis of Raman scattering in various Si/Si1-xGex multilayered nanostructures with well-defined Ge composition (x) and layer thicknesses. Using Raman and transmission electron microscopy data, we discuss and model Si/SiGe intermixing and strain. By analyzing Stokes and anti-Stokes Raman signals, we calculate temperature and discuss heat dissipation in the samples under intense laser illumination.

AB - We present a quantitative analysis of Raman scattering in various Si/Si1-xGex multilayered nanostructures with well-defined Ge composition (x) and layer thicknesses. Using Raman and transmission electron microscopy data, we discuss and model Si/SiGe intermixing and strain. By analyzing Stokes and anti-Stokes Raman signals, we calculate temperature and discuss heat dissipation in the samples under intense laser illumination.

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Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation

Abstract

All Science Journal Classification (ASJC) codes

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