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Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation
S. A. Mala
,
L. Tsybeskov
, D. J. Lockwood
, X. Wu
, J. M. Baribeau
Electrical and Computer Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
26
Scopus citations
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Dive into the research topics of 'Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation'. Together they form a unique fingerprint.
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Keyphrases
Chemical Composition
100%
Raman Scattering
100%
SiGe Nanostructures
100%
Heat Dissipation
100%
Well-defined
50%
SiGe
50%
Stokes
50%
Layer Thickness
50%
Raman Signal
50%
Ge Composition
50%
Anti-Stokes
50%
Transmission Electron Microscopy
50%
Si1-xGex
50%
Microscopy Data
50%
Multi-layered Nanostructures
50%
Intense Laser
50%
Laser Illumination
50%
Chemistry
Phase Composition
100%
Nanomaterial
100%
Transmission Electron Microscopy
50%
Illumination
50%
Medicine and Dentistry
Dissipation
100%
Raman Scattering
100%
Transmission Electron Microscopy
50%
Material Science
Nanocrystalline Material
100%
Transmission Electron Microscopy
50%
Pharmacology, Toxicology and Pharmaceutical Science
Nanomaterial
100%
Transmission Electron Microscopy
50%