Rapid thermal activation and diffusion of boron and phosphorus implants

A. T. Fiory; S. G. Chawda; S. Madishetty; V. R. Mehta; N. M. Ravindra; S. P. McCoy; M. E. Lefrançois; K. K. Bourdelle; J. M. McKinley; H. J.L. Gossmann; A. Agarwal

doi:10.1109/RTP.2001.1013770

Rapid thermal activation and diffusion of boron and phosphorus implants

A. T. Fiory, S. G. Chawda, S. Madishetty, V. R. Mehta, N. M. Ravindra, S. P. McCoy, M. E. Lefrançois, K. K. Bourdelle, J. M. McKinley, H. J.L. Gossmann, A. Agarwal

Physics

Research output: Contribution to conference › Paper › peer-review

5 Scopus citations

Abstract

Crystalline Si was doped with high concentrations of B and P near the surface by low energy ion implantation and electrically activated by rapid thermal annealing (RTA) and the special case of spike annealing. Diffusion depths were determined by secondary ion mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse bias diode leakage. While both species show transient enhanced diffusion (TED), electrical activation strongly increases with dose for P implants and comparatively weakly for B implants.

Original language	English (US)
Pages	227-231
Number of pages	5
DOIs	https://doi.org/10.1109/RTP.2001.1013770
State	Published - 2001
Event	9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001 - Anchorage, United States Duration: Sep 25 2001 → Sep 29 2001

Other

Other	9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001
Country/Territory	United States
City	Anchorage
Period	9/25/01 → 9/29/01

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering

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10.1109/RTP.2001.1013770

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Fiory, A. T., Chawda, S. G., Madishetty, S., Mehta, V. R., Ravindra, N. M., McCoy, S. P., Lefrançois, M. E., Bourdelle, K. K., McKinley, J. M., Gossmann, H. J. L., & Agarwal, A. (2001). Rapid thermal activation and diffusion of boron and phosphorus implants. 227-231. Paper presented at 9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001, Anchorage, United States. https://doi.org/10.1109/RTP.2001.1013770

@conference{f10cc6f823954872a34d4d093091d253,

title = "Rapid thermal activation and diffusion of boron and phosphorus implants",

abstract = "Crystalline Si was doped with high concentrations of B and P near the surface by low energy ion implantation and electrically activated by rapid thermal annealing (RTA) and the special case of spike annealing. Diffusion depths were determined by secondary ion mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse bias diode leakage. While both species show transient enhanced diffusion (TED), electrical activation strongly increases with dose for P implants and comparatively weakly for B implants.",

author = "Fiory, {A. T.} and Chawda, {S. G.} and S. Madishetty and Mehta, {V. R.} and Ravindra, {N. M.} and McCoy, {S. P.} and Lefran{\c c}ois, {M. E.} and Bourdelle, {K. K.} and McKinley, {J. M.} and Gossmann, {H. J.L.} and A. Agarwal",

note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001 ; Conference date: 25-09-2001 Through 29-09-2001",

year = "2001",

doi = "10.1109/RTP.2001.1013770",

language = "English (US)",

pages = "227--231",

}

Fiory, AT, Chawda, SG, Madishetty, S, Mehta, VR, Ravindra, NM, McCoy, SP, Lefrançois, ME, Bourdelle, KK, McKinley, JM, Gossmann, HJL & Agarwal, A 2001, 'Rapid thermal activation and diffusion of boron and phosphorus implants', Paper presented at 9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001, Anchorage, United States, 9/25/01 - 9/29/01 pp. 227-231. https://doi.org/10.1109/RTP.2001.1013770

TY - CONF

T1 - Rapid thermal activation and diffusion of boron and phosphorus implants

AU - Fiory, A. T.

AU - Chawda, S. G.

AU - Madishetty, S.

AU - Mehta, V. R.

AU - Ravindra, N. M.

AU - McCoy, S. P.

AU - Lefrançois, M. E.

AU - Bourdelle, K. K.

AU - McKinley, J. M.

AU - Gossmann, H. J.L.

AU - Agarwal, A.

PY - 2001

Y1 - 2001

N2 - Crystalline Si was doped with high concentrations of B and P near the surface by low energy ion implantation and electrically activated by rapid thermal annealing (RTA) and the special case of spike annealing. Diffusion depths were determined by secondary ion mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse bias diode leakage. While both species show transient enhanced diffusion (TED), electrical activation strongly increases with dose for P implants and comparatively weakly for B implants.

AB - Crystalline Si was doped with high concentrations of B and P near the surface by low energy ion implantation and electrically activated by rapid thermal annealing (RTA) and the special case of spike annealing. Diffusion depths were determined by secondary ion mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse bias diode leakage. While both species show transient enhanced diffusion (TED), electrical activation strongly increases with dose for P implants and comparatively weakly for B implants.

UR - http://www.scopus.com/inward/record.url?scp=84983156798&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84983156798&partnerID=8YFLogxK

U2 - 10.1109/RTP.2001.1013770

DO - 10.1109/RTP.2001.1013770

M3 - Paper

AN - SCOPUS:84983156798

SP - 227

EP - 231

T2 - 9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001

Y2 - 25 September 2001 through 29 September 2001

ER -

Rapid thermal activation and diffusion of boron and phosphorus implants

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