Abstract
Crystalline Si was doped with high concentrations of B and P near the surface by low energy ion implantation and electrically activated by rapid thermal annealing (RTA) and the special case of spike annealing. Diffusion depths were determined by secondary ion mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse bias diode leakage. While both species show transient enhanced diffusion (TED), electrical activation strongly increases with dose for P implants and comparatively weakly for B implants.
Original language | English (US) |
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Pages | 227-231 |
Number of pages | 5 |
DOIs | |
State | Published - 2001 |
Event | 9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001 - Anchorage, United States Duration: Sep 25 2001 → Sep 29 2001 |
Other
Other | 9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001 |
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Country/Territory | United States |
City | Anchorage |
Period | 9/25/01 → 9/29/01 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Industrial and Manufacturing Engineering