The thin-film deposition method of reactive-environment sputtering was examined using a linear and scalable hollow cathode source. Investigations show that the thin-film deposition method was applicable for the production of transparent conductors such as ZnO:Al and In 2O 3. The high plasma density, high deposition rate, low-energy ion bombardment and high target utilization were the characteristics of the thin-film deposition method. The results show that the thin-film deposition method was used in the preparation of compound films for the transparent conductors, resistors and ferroelectrics.
|Number of pages
|Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
|Published - Jul 2004
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films