Reactive-environment, hollow cathode sputtering: Basic characteristics and application to Al 2O 3, doped ZnO, and ln 2O 3:Mo

A. E. Delahoy, S. Y. Guo, C. Paduraru, A. Belkind

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27 Scopus citations

Abstract

The thin-film deposition method of reactive-environment sputtering was examined using a linear and scalable hollow cathode source. Investigations show that the thin-film deposition method was applicable for the production of transparent conductors such as ZnO:Al and In 2O 3. The high plasma density, high deposition rate, low-energy ion bombardment and high target utilization were the characteristics of the thin-film deposition method. The results show that the thin-film deposition method was used in the preparation of compound films for the transparent conductors, resistors and ferroelectrics.

Original languageEnglish (US)
Pages (from-to)1697-1704
Number of pages8
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number4
DOIs
StatePublished - Jul 2004

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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