Reactive-environment, hollow cathode sputtering: Basic characteristics and application to Al ₂O ₃, doped ZnO, and ln ₂O ₃:Mo

The thin-film deposition method of reactive-environment sputtering was examined using a linear and scalable hollow cathode source. Investigations show that the thin-film deposition method was applicable for the production of transparent conductors such as ZnO:Al and In ₂O ₃. The high plasma density, high deposition rate, low-energy ion bombardment and high target utilization were the characteristics of the thin-film deposition method. The results show that the thin-film deposition method was used in the preparation of compound films for the transparent conductors, resistors and ferroelectrics.