Reactive-environment, hollow cathode sputtering: Basic characteristics and application to Al 2O 3, doped ZnO, and ln 2O 3:Mo

A. E. Delahoy; S. Y. Guo; C. Paduraru; A. Belkind

doi:10.1116/1.1723289

Reactive-environment, hollow cathode sputtering: Basic characteristics and application to Al ₂O ₃, doped ZnO, and ln ₂O ₃:Mo

A. E. Delahoy
, S. Y. Guo
, C. Paduraru
, A. Belkind

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

The thin-film deposition method of reactive-environment sputtering was examined using a linear and scalable hollow cathode source. Investigations show that the thin-film deposition method was applicable for the production of transparent conductors such as ZnO:Al and In ₂O ₃. The high plasma density, high deposition rate, low-energy ion bombardment and high target utilization were the characteristics of the thin-film deposition method. The results show that the thin-film deposition method was used in the preparation of compound films for the transparent conductors, resistors and ferroelectrics.

Original language	English (US)
Pages (from-to)	1697-1704
Number of pages	8
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	4
DOIs	https://doi.org/10.1116/1.1723289
State	Published - Jul 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.1723289

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abstract = "The thin-film deposition method of reactive-environment sputtering was examined using a linear and scalable hollow cathode source. Investigations show that the thin-film deposition method was applicable for the production of transparent conductors such as ZnO:Al and In 2O 3. The high plasma density, high deposition rate, low-energy ion bombardment and high target utilization were the characteristics of the thin-film deposition method. The results show that the thin-film deposition method was used in the preparation of compound films for the transparent conductors, resistors and ferroelectrics.",

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AU - Delahoy, A. E.

AU - Guo, S. Y.

AU - Paduraru, C.

AU - Belkind, A.

PY - 2004/7

Y1 - 2004/7

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AB - The thin-film deposition method of reactive-environment sputtering was examined using a linear and scalable hollow cathode source. Investigations show that the thin-film deposition method was applicable for the production of transparent conductors such as ZnO:Al and In 2O 3. The high plasma density, high deposition rate, low-energy ion bombardment and high target utilization were the characteristics of the thin-film deposition method. The results show that the thin-film deposition method was used in the preparation of compound films for the transparent conductors, resistors and ferroelectrics.

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Reactive-environment, hollow cathode sputtering: Basic characteristics and application to Al ₂O ₃, doped ZnO, and ln ₂O ₃:Mo

Abstract

All Science Journal Classification (ASJC) codes

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