Reactive ion etching (CF4+02 plasma) induced deep levels in metal-oxide-semiconductor devices

Engineering & Materials Science

• Capacitance measurement 26%
• Deep level transient spectroscopy 64%
• Defects 24%
• Electron traps 33%
• Electrons 18%
• Etching 19%
• Glow discharges 26%
• Ions 33%
• Metals 23%
• MOS devices 100%
• Oxide semiconductors 42%
• Photons 63%
• Plasmas 66%
• Reactive ion etching 97%
• Silicon 28%
• Substrates 12%
• Voltage measurement 22%

Physics & Astronomy

• capacitance 9%
• damage 25%
• defects 13%
• electrical measurement 11%
• electrons 10%
• etching 54%
• glow discharges 12%
• ions 33%
• metal oxide semiconductors 73%
• photons 20%
• semiconductor devices 73%
• silicon 12%
• spectroscopy 12%
• trapping 18%
• traps 8%

Chemical Compounds

• Deep Level Transient Spectroscopy 40%
• Dimension 9%
• Electron Particle 6%
• Electron Trap 17%
• Etching 65%
• Glow Discharge 14%
• Ion 28%
• Photon 34%
• Plasma 44%
• Reduction 5%