Abstract
This work describes the experimental results of the effect of dry etching on the electrical characteristics of strained Si1-xGex/Si p+-n heterojunctions. An increase in the series resistance and a dominance in recombination current is noticed from the I-V characteristics of the dry etched devices. A degradation in the device characteristics due to the introduction of active states at the interface is seen in the high frequency C-V measurements. This indicates that the process induced damage can introduce mis-fit dislocations at the silicon and silicon-germanium interface which in turn seriously limit the electrical characteristics of the device.
Original language | English (US) |
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Title of host publication | ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference |
Publisher | IEEE Computer Society |
Pages | 321-324 |
Number of pages | 4 |
ISBN (Electronic) | 2863321358 |
ISBN (Print) | 9782863321355 |
State | Published - Jan 1 1993 |
Event | 23rd European Solid State Device Research Conference, ESSDERC 1993 - Grenoble, France Duration: Sep 13 1993 → Sep 16 1993 |
Other
Other | 23rd European Solid State Device Research Conference, ESSDERC 1993 |
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Country/Territory | France |
City | Grenoble |
Period | 9/13/93 → 9/16/93 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality