Reactive ion etching damage to strained Si1-xGexheterojunction diodes

Wei Zhong; D. Misra

Reactive ion etching damage to strained Si_1-xGe_xheterojunction diodes

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work describes the experimental results of the effect of dry etching on the electrical characteristics of strained Si_1-xGe_x/Si p⁺-n heterojunctions. An increase in the series resistance and a dominance in recombination current is noticed from the I-V characteristics of the dry etched devices. A degradation in the device characteristics due to the introduction of active states at the interface is seen in the high frequency C-V measurements. This indicates that the process induced damage can introduce mis-fit dislocations at the silicon and silicon-germanium interface which in turn seriously limit the electrical characteristics of the device.

Original language	English (US)
Title of host publication	ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference
Editors	J. P. Noblanc, P. Gentil, M. Verdone, J. Borel, A. Nouailhat
Publisher	IEEE Computer Society
Pages	321-324
Number of pages	4
ISBN (Electronic)	2863321358
ISBN (Print)	9782863321355
State	Published - 1993
Event	23rd European Solid State Device Research Conference, ESSDERC 1993 - Grenoble, France Duration: Sep 13 1993 → Sep 16 1993

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Other

Other	23rd European Solid State Device Research Conference, ESSDERC 1993
Country/Territory	France
City	Grenoble
Period	9/13/93 → 9/16/93

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Cite this

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title = "Reactive ion etching damage to strained Si1-xGexheterojunction diodes",

abstract = "This work describes the experimental results of the effect of dry etching on the electrical characteristics of strained Si1-xGex/Si p+-n heterojunctions. An increase in the series resistance and a dominance in recombination current is noticed from the I-V characteristics of the dry etched devices. A degradation in the device characteristics due to the introduction of active states at the interface is seen in the high frequency C-V measurements. This indicates that the process induced damage can introduce mis-fit dislocations at the silicon and silicon-germanium interface which in turn seriously limit the electrical characteristics of the device.",

author = "Wei Zhong and D. Misra",

note = "Publisher Copyright: {\textcopyright} 1993 Editions Frontieres.; 23rd European Solid State Device Research Conference, ESSDERC 1993 ; Conference date: 13-09-1993 Through 16-09-1993",

year = "1993",

language = "English (US)",

isbn = "9782863321355",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "321--324",

editor = "Noblanc, {J. P.} and P. Gentil and M. Verdone and J. Borel and A. Nouailhat",

booktitle = "ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference",

address = "United States",

}

Zhong, W & Misra, D 1993, Reactive ion etching damage to strained Si_1-xGe_xheterojunction diodes. in JP Noblanc, P Gentil, M Verdone, J Borel & A Nouailhat (eds), ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference., 5435514, European Solid-State Device Research Conference, IEEE Computer Society, pp. 321-324, 23rd European Solid State Device Research Conference, ESSDERC 1993, Grenoble, France, 9/13/93.

Reactive ion etching damage to strained Si_1-xGe_xheterojunction diodes. / Zhong, Wei; Misra, D.
ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference. ed. / J. P. Noblanc; P. Gentil; M. Verdone; J. Borel; A. Nouailhat. IEEE Computer Society, 1993. p. 321-324 5435514 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Zhong, Wei

AU - Misra, D.

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N2 - This work describes the experimental results of the effect of dry etching on the electrical characteristics of strained Si1-xGex/Si p+-n heterojunctions. An increase in the series resistance and a dominance in recombination current is noticed from the I-V characteristics of the dry etched devices. A degradation in the device characteristics due to the introduction of active states at the interface is seen in the high frequency C-V measurements. This indicates that the process induced damage can introduce mis-fit dislocations at the silicon and silicon-germanium interface which in turn seriously limit the electrical characteristics of the device.

AB - This work describes the experimental results of the effect of dry etching on the electrical characteristics of strained Si1-xGex/Si p+-n heterojunctions. An increase in the series resistance and a dominance in recombination current is noticed from the I-V characteristics of the dry etched devices. A degradation in the device characteristics due to the introduction of active states at the interface is seen in the high frequency C-V measurements. This indicates that the process induced damage can introduce mis-fit dislocations at the silicon and silicon-germanium interface which in turn seriously limit the electrical characteristics of the device.

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A2 - Verdone, M.

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