Reactive ion etching damage to strained Si1-xGexheterojunction diodes

Wei Zhong; Durgamadhab Misra

Reactive ion etching damage to strained Si_1-xGe_xheterojunction diodes

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work describes the experimental results of the effect of dry etching on the electrical characteristics of strained Si_1-xGe_x/Si p⁺-n heterojunctions. An increase in the series resistance and a dominance in recombination current is noticed from the I-V characteristics of the dry etched devices. A degradation in the device characteristics due to the introduction of active states at the interface is seen in the high frequency C-V measurements. This indicates that the process induced damage can introduce mis-fit dislocations at the silicon and silicon-germanium interface which in turn seriously limit the electrical characteristics of the device.

Original language	English (US)
Title of host publication	ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference
Publisher	IEEE Computer Society
Pages	321-324
Number of pages	4
ISBN (Electronic)	2863321358
ISBN (Print)	9782863321355
State	Published - Jan 1 1993
Event	23rd European Solid State Device Research Conference, ESSDERC 1993 - Grenoble, France Duration: Sep 13 1993 → Sep 16 1993

Other

Other	23rd European Solid State Device Research Conference, ESSDERC 1993
Country/Territory	France
City	Grenoble
Period	9/13/93 → 9/16/93

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Cite this

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title = "Reactive ion etching damage to strained Si1-xGexheterojunction diodes",

abstract = "This work describes the experimental results of the effect of dry etching on the electrical characteristics of strained Si1-xGex/Si p+-n heterojunctions. An increase in the series resistance and a dominance in recombination current is noticed from the I-V characteristics of the dry etched devices. A degradation in the device characteristics due to the introduction of active states at the interface is seen in the high frequency C-V measurements. This indicates that the process induced damage can introduce mis-fit dislocations at the silicon and silicon-germanium interface which in turn seriously limit the electrical characteristics of the device.",

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AU - Zhong, Wei

AU - Misra, Durgamadhab

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N2 - This work describes the experimental results of the effect of dry etching on the electrical characteristics of strained Si1-xGex/Si p+-n heterojunctions. An increase in the series resistance and a dominance in recombination current is noticed from the I-V characteristics of the dry etched devices. A degradation in the device characteristics due to the introduction of active states at the interface is seen in the high frequency C-V measurements. This indicates that the process induced damage can introduce mis-fit dislocations at the silicon and silicon-germanium interface which in turn seriously limit the electrical characteristics of the device.

AB - This work describes the experimental results of the effect of dry etching on the electrical characteristics of strained Si1-xGex/Si p+-n heterojunctions. An increase in the series resistance and a dominance in recombination current is noticed from the I-V characteristics of the dry etched devices. A degradation in the device characteristics due to the introduction of active states at the interface is seen in the high frequency C-V measurements. This indicates that the process induced damage can introduce mis-fit dislocations at the silicon and silicon-germanium interface which in turn seriously limit the electrical characteristics of the device.

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M3 - Conference contribution

AN - SCOPUS:84907689827

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EP - 324

BT - ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference

PB - IEEE Computer Society

T2 - 23rd European Solid State Device Research Conference, ESSDERC 1993

Y2 - 13 September 1993 through 16 September 1993

ER -

Reactive ion etching damage to strained Si_1-xGe_xheterojunction diodes

Abstract

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All Science Journal Classification (ASJC) codes

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