@inproceedings{0ce733e366624716bbbaeca55c9fce68,
title = "Reactive ion etching damage to strained Si1-xGexheterojunction diodes",
abstract = "This work describes the experimental results of the effect of dry etching on the electrical characteristics of strained Si1-xGex/Si p+-n heterojunctions. An increase in the series resistance and a dominance in recombination current is noticed from the I-V characteristics of the dry etched devices. A degradation in the device characteristics due to the introduction of active states at the interface is seen in the high frequency C-V measurements. This indicates that the process induced damage can introduce mis-fit dislocations at the silicon and silicon-germanium interface which in turn seriously limit the electrical characteristics of the device.",
author = "Wei Zhong and D. Misra",
note = "Publisher Copyright: {\textcopyright} 1993 Editions Frontieres.; 23rd European Solid State Device Research Conference, ESSDERC 1993 ; Conference date: 13-09-1993 Through 16-09-1993",
year = "1993",
language = "English (US)",
isbn = "9782863321355",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "321--324",
editor = "Noblanc, {J. P.} and P. Gentil and M. Verdone and J. Borel and A. Nouailhat",
booktitle = "ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference",
address = "United States",
}