Reactive ion etching damage to strained Si1-xGexheterojunction diodes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work describes the experimental results of the effect of dry etching on the electrical characteristics of strained Si1-xGex/Si p+-n heterojunctions. An increase in the series resistance and a dominance in recombination current is noticed from the I-V characteristics of the dry etched devices. A degradation in the device characteristics due to the introduction of active states at the interface is seen in the high frequency C-V measurements. This indicates that the process induced damage can introduce mis-fit dislocations at the silicon and silicon-germanium interface which in turn seriously limit the electrical characteristics of the device.

Original languageEnglish (US)
Title of host publicationESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference
PublisherIEEE Computer Society
Pages321-324
Number of pages4
ISBN (Electronic)2863321358
ISBN (Print)9782863321355
StatePublished - Jan 1 1993
Event23rd European Solid State Device Research Conference, ESSDERC 1993 - Grenoble, France
Duration: Sep 13 1993Sep 16 1993

Other

Other23rd European Solid State Device Research Conference, ESSDERC 1993
Country/TerritoryFrance
CityGrenoble
Period9/13/939/16/93

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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