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Reactive ion etching damage to strained Si
1-x
Ge
x
heterojunction diodes
Wei Zhong
,
D. Misra
Electrical and Computer Engineering
Research output
:
Chapter in Book/Report/Conference proceeding
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Dive into the research topics of 'Reactive ion etching damage to strained Si
1-x
Ge
x
heterojunction diodes'. Together they form a unique fingerprint.
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Keyphrases
Diode
100%
Electrical Characteristics
100%
Reactive Ion Etching
100%
Etching Damage
100%
Silicon-germanium
50%
Dislocation
50%
I-V Characteristics
50%
Misfit
50%
Active State
50%
Series Resistance
50%
Dry Etching
50%
Si1-xGex
50%
Device Characteristics
50%
C-V Measurement
50%
Induced Damage
50%
Recombination Current
50%
P-n Heterojunction
50%
Engineering
Heterojunctions
100%
Experimental Result
100%
Current-Voltage Characteristic
100%
Series Resistance
100%
Induced Damage
100%
Dry Etching
100%
Material Science
Silicon
100%
Reactive Ion Etching
100%
Electrical Property
100%
Heterojunction
50%
Germanium
50%
Current-Voltage Characteristic
50%
Dry Etching
50%