Reactive ion etching damage to strained Si_1-xGe_xheterojunction diodes

Keyphrases

• Active State 50%
• C-V Measurement 50%
• Device Characteristics 50%
• Diode 100%
• Dislocation 50%
• Dry Etching 50%
• Electrical Characteristics 100%
• Etching Damage 100%
• I-V Characteristics 50%
• Induced Damage 50%
• Misfit 50%
• P-n Heterojunction 50%
• Reactive Ion Etching 100%
• Recombination Current 50%
• Series Resistance 50%
• Si1-xGex 50%
• Silicon-germanium 50%

Engineering

• Current-Voltage Characteristic 100%
• Dry Etching 100%
• Experimental Result 100%
• Heterojunctions 100%
• Induced Damage 100%
• Series Resistance 100%

Material Science

• Current-Voltage Characteristic 50%
• Dry Etching 50%
• Electrical Property 100%
• Germanium 50%
• Heterojunction 50%
• Reactive Ion Etching 100%
• Silicon 100%