REALIZATION OF KINK EFFECT IN THE DRAIN CHARACTERISTICS OF III-NITRIDE/Β-GA2O3 NANO-HEMT DUE TO TRAPS AND SELF-HEATING

In this research article, a field-plated and recessed gate III-nitride Nao-HEMT grown on β-Ga2O3 substrate is designed. The electrical characteristics of the proposed HEMT is investigated by using the thermal models of ATLAS TCAD simulations. The investigation focuses on the impact of traps and thermal influence that cause the Kink effect in DC characteristics of III-Nitride/β-Ga2O3 HEMT. A noticeable kink effect is observed in proposed III-Nitride/β-Ga2O3 HEMT. This phenomenon is typified by an abrupt rise in drain current at high gate voltages, which causes the device to behave non-linearly. The kink effect is most likely caused by traps in a barrier layer activating. A field-plate, gate length, and gate recessed depth of 20-nm each is considered for the analysis. Furthermore, self-heating effect in drain current characteristics are investigated with temperature changes. The findings demonstrated that scattering processes that emerge when temperature increases above a particular amount cause both the mobility and the carrier concentration of 2DEG to decrease. Consequently, the output current performance degrades as a result of the self-heating effect becoming more noticeable. In addition, the drain lag phenomenon is investigated in connection with the drain current's transient behavior. The duration of the channel's formation and ability to permit current flow between the drain and source terminals is the reason for this drain lag phenomenon. It is hypothesized that the device's channel length, trapping and de-trapping, and thermal influence are some of the factors that affect the drain lag. Finally, the implications with this drain lag phenomenon are investigated.