Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111)

V. Cardin, L. I. Dion-Bertrand, P. Grégoire, H. P.T. Nguyen, M. Sakowicz, Z. Mi, C. Silva, R. Leonelli

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


We have performed room-temperature time-resolved photoluminescence measurements on samples that comprise InGaN insertions embedded in GaN nanowires. The decay curves reveal non-exponential recombination dynamics that evolve into a power law at long times. We find that the characteristic power-law exponent increases with emission photon energy. The data are analyzed in terms of a model that involves an interplay between a radiative state and a metastable charge-separated state. The agreement between our results and the model points towards an emission dominated by carriers localized on In-rich nanoclusters that form spontaneously inside the InGaN insertions.

Original languageEnglish (US)
Article number045702
Issue number4
StatePublished - Feb 1 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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