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Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111)
V. Cardin
, L. I. Dion-Bertrand
, P. Grégoire
, H. P.T. Nguyen
, M. Sakowicz
, Z. Mi
, C. Silva
, R. Leonelli
Research output
:
Contribution to journal
›
Article
›
peer-review
11
Scopus citations
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Keyphrases
Charge-separated State
33%
Decay Curves
33%
GaN Nanowires
100%
In-rich
33%
Indium Gallium Nitride (InGaN)
100%
Nanoclusters
33%
Nanowire Heterostructures
100%
Photoluminescence Measurements
33%
Photon Energy
33%
Power Law
33%
Power-law Exponent
33%
Recombination Dynamics
100%
Room Temperature
33%
Si(111)
100%
Time-resolved Photoluminescence
33%
Engineering
Heterostructures
100%
Localized Carrier
50%
Nanoclusters
50%
Nanowires
100%
Photon Energy
50%
Power Law Exponent
50%
Room Temperature
50%
Temperature Time
50%
Material Science
Heterojunction
100%
Nanoclusters
50%
Nanowire
100%
Photoluminescence
50%
Physics
Nanoclusters
50%
Nanowires
100%
Photoluminescence
50%
Room Temperature
50%
Chemistry
Ambient Reaction Temperature
50%
Nanowires
100%
Photoluminescence
50%
Photon Emission
50%
Mathematics
Point Model
50%
Power Law
100%
Room Temperature
50%