Rectifying property and magnetocapacitance in multiferroic p-n junction

J. J. Yang; S. M. Guo; L. B. Luo; C. M. Xiong; Y. G. Zhao; Y. J. He

doi:10.1063/1.2883942

Rectifying property and magnetocapacitance in multiferroic p-n junction

J. J. Yang, S. M. Guo, L. B. Luo, C. M. Xiong, Y. G. Zhao, Y. J. He

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Multiferroic p-n junctions were fabricated by growing La0.1 Bi0.9 Mn O3 films on Nb-SrTi O3 using pulsed laser deposition. The current-voltage curves of the junction show good rectifying property. Both the ferroelectric transition and ferromagnetic transition of La0.1 Bi0.9 Mn O3 have remarkable influence on the transport properties of the junction. A large positive magnetocapacitance was also observed in this junction. Analysis suggests that the property of La0.1 Bi0.9 Mn O3 Nb-SrTi O3 is dominated by the property of La0.1 Bi0.9 Mn O3. This work demonstrates that multiferroic p-n junctions possess some interesting properties that may be useful for future applications.

Original language	English (US)
Article number	063513
Journal	Applied Physics Letters
Volume	92
Issue number	6
DOIs	https://doi.org/10.1063/1.2883942
State	Published - 2008
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2883942

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title = "Rectifying property and magnetocapacitance in multiferroic p-n junction",

abstract = "Multiferroic p-n junctions were fabricated by growing La0.1 Bi0.9 Mn O3 films on Nb-SrTi O3 using pulsed laser deposition. The current-voltage curves of the junction show good rectifying property. Both the ferroelectric transition and ferromagnetic transition of La0.1 Bi0.9 Mn O3 have remarkable influence on the transport properties of the junction. A large positive magnetocapacitance was also observed in this junction. Analysis suggests that the property of La0.1 Bi0.9 Mn O3 Nb-SrTi O3 is dominated by the property of La0.1 Bi0.9 Mn O3. This work demonstrates that multiferroic p-n junctions possess some interesting properties that may be useful for future applications.",

author = "Yang, {J. J.} and Guo, {S. M.} and Luo, {L. B.} and Xiong, {C. M.} and Zhao, {Y. G.} and He, {Y. J.}",

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journal = "Applied Physics Letters",

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T1 - Rectifying property and magnetocapacitance in multiferroic p-n junction

AU - Yang, J. J.

AU - Guo, S. M.

AU - Luo, L. B.

AU - Xiong, C. M.

AU - Zhao, Y. G.

AU - He, Y. J.

PY - 2008

Y1 - 2008

N2 - Multiferroic p-n junctions were fabricated by growing La0.1 Bi0.9 Mn O3 films on Nb-SrTi O3 using pulsed laser deposition. The current-voltage curves of the junction show good rectifying property. Both the ferroelectric transition and ferromagnetic transition of La0.1 Bi0.9 Mn O3 have remarkable influence on the transport properties of the junction. A large positive magnetocapacitance was also observed in this junction. Analysis suggests that the property of La0.1 Bi0.9 Mn O3 Nb-SrTi O3 is dominated by the property of La0.1 Bi0.9 Mn O3. This work demonstrates that multiferroic p-n junctions possess some interesting properties that may be useful for future applications.

AB - Multiferroic p-n junctions were fabricated by growing La0.1 Bi0.9 Mn O3 films on Nb-SrTi O3 using pulsed laser deposition. The current-voltage curves of the junction show good rectifying property. Both the ferroelectric transition and ferromagnetic transition of La0.1 Bi0.9 Mn O3 have remarkable influence on the transport properties of the junction. A large positive magnetocapacitance was also observed in this junction. Analysis suggests that the property of La0.1 Bi0.9 Mn O3 Nb-SrTi O3 is dominated by the property of La0.1 Bi0.9 Mn O3. This work demonstrates that multiferroic p-n junctions possess some interesting properties that may be useful for future applications.

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Rectifying property and magnetocapacitance in multiferroic p-n junction

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