Rectifying property and magnetocapacitance in multiferroic p-n junction

J. J. Yang, S. M. Guo, L. B. Luo, C. M. Xiong, Y. G. Zhao, Y. J. He

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Multiferroic p-n junctions were fabricated by growing La0.1 Bi0.9 Mn O3 films on Nb-SrTi O3 using pulsed laser deposition. The current-voltage curves of the junction show good rectifying property. Both the ferroelectric transition and ferromagnetic transition of La0.1 Bi0.9 Mn O3 have remarkable influence on the transport properties of the junction. A large positive magnetocapacitance was also observed in this junction. Analysis suggests that the property of La0.1 Bi0.9 Mn O3 Nb-SrTi O3 is dominated by the property of La0.1 Bi0.9 Mn O3. This work demonstrates that multiferroic p-n junctions possess some interesting properties that may be useful for future applications.

Original languageEnglish (US)
Article number063513
JournalApplied Physics Letters
Issue number6
StatePublished - 2008
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Rectifying property and magnetocapacitance in multiferroic p-n junction'. Together they form a unique fingerprint.

Cite this