Reduced 1/f noise and gm degradation for sub-0.25 μm MOSFETs with 25 angstroms-50 angstroms gate oxides grown on nitrogen implanted Si substrates

C. T. Liu, D. Misra, K. P. Cheung, G. B. Alers, C. P. Chang, J. I. Colonell, W. Y.C. Lai, C. S. Pai, R. Liu, J. T. Clemens

Research output: Contribution to conferencePaperpeer-review

4 Scopus citations

Abstract

A light dose of nitrogen implant is introduced into the Si substrate before growing the oxides, and incorporated 3-4 atomic% of nitrogen in the oxides. The 1/f noise is reduced by a factor of 2-5 and gm degradation by a factor of 5. The N+ I/I does not affect the oxide breakdown field which continues to follow the hole-trap model as the oxide thickness reaches 25 angstroms.

Original languageEnglish (US)
Pages124-125
Number of pages2
StatePublished - Jan 1 1997
Externally publishedYes
EventProceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA
Duration: Jun 23 1997Jun 25 1997

Other

OtherProceedings of the 1997 55th Annual Device Research Conference
CityFort Collins, CO, USA
Period6/23/976/25/97

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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