Reduced 1/f noise and gm degradation for sub-0.25 μm MOSFETs with 25 angstroms-50 angstroms gate oxides grown on nitrogen implanted Si substrates

C. T. Liu; D. Misra; K. P. Cheung; G. B. Alers; C. P. Chang; J. I. Colonell; W. Y.C. Lai; C. S. Pai; R. Liu; J. T. Clemens

Reduced 1/f noise and g_m degradation for sub-0.25 μm MOSFETs with 25 angstroms-50 angstroms gate oxides grown on nitrogen implanted Si substrates

C. T. Liu
, D. Misra
, K. P. Cheung
, G. B. Alers
, C. P. Chang
, J. I. Colonell
, W. Y.C. Lai
, C. S. Pai
, R. Liu
, J. T. Clemens

Research output: Contribution to conference › Paper › peer-review

Abstract

A light dose of nitrogen implant is introduced into the Si substrate before growing the oxides, and incorporated 3-4 atomic% of nitrogen in the oxides. The 1/f noise is reduced by a factor of 2-5 and g_m degradation by a factor of 5. The N⁺ I/I does not affect the oxide breakdown field which continues to follow the hole-trap model as the oxide thickness reaches 25 angstroms.

Original language	English (US)
Pages	124-125
Number of pages	2
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA Duration: Jun 23 1997 → Jun 25 1997

Other

Other	Proceedings of the 1997 55th Annual Device Research Conference
City	Fort Collins, CO, USA
Period	6/23/97 → 6/25/97

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

Liu, C. T., Misra, D., Cheung, K. P., Alers, G. B., Chang, C. P., Colonell, J. I., Lai, W. Y. C., Pai, C. S., Liu, R., & Clemens, J. T. (1997). Reduced 1/f noise and g_m degradation for sub-0.25 μm MOSFETs with 25 angstroms-50 angstroms gate oxides grown on nitrogen implanted Si substrates. 124-125. Paper presented at Proceedings of the 1997 55th Annual Device Research Conference, Fort Collins, CO, USA.

@conference{d0fef5e83c4e4907a3b1f7a08ee3bea6,

title = "Reduced 1/f noise and gm degradation for sub-0.25 μm MOSFETs with 25 angstroms-50 angstroms gate oxides grown on nitrogen implanted Si substrates",

abstract = "A light dose of nitrogen implant is introduced into the Si substrate before growing the oxides, and incorporated 3-4 atomic\% of nitrogen in the oxides. The 1/f noise is reduced by a factor of 2-5 and gm degradation by a factor of 5. The N+ I/I does not affect the oxide breakdown field which continues to follow the hole-trap model as the oxide thickness reaches 25 angstroms.",

author = "Liu, \{C. T.\} and D. Misra and Cheung, \{K. P.\} and Alers, \{G. B.\} and Chang, \{C. P.\} and Colonell, \{J. I.\} and Lai, \{W. Y.C.\} and Pai, \{C. S.\} and R. Liu and Clemens, \{J. T.\}",

year = "1997",

language = "English (US)",

pages = "124--125",

note = "Proceedings of the 1997 55th Annual Device Research Conference ; Conference date: 23-06-1997 Through 25-06-1997",

}

Liu, CT, Misra, D, Cheung, KP, Alers, GB, Chang, CP, Colonell, JI, Lai, WYC, Pai, CS, Liu, R & Clemens, JT 1997, 'Reduced 1/f noise and g_m degradation for sub-0.25 μm MOSFETs with 25 angstroms-50 angstroms gate oxides grown on nitrogen implanted Si substrates', Paper presented at Proceedings of the 1997 55th Annual Device Research Conference, Fort Collins, CO, USA, 6/23/97 - 6/25/97 pp. 124-125.

Reduced 1/f noise and g_m degradation for sub-0.25 μm MOSFETs with 25 angstroms-50 angstroms gate oxides grown on nitrogen implanted Si substrates. / Liu, C. T.; Misra, D.; Cheung, K. P. et al.
1997. 124-125 Paper presented at Proceedings of the 1997 55th Annual Device Research Conference, Fort Collins, CO, USA.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Reduced 1/f noise and gm degradation for sub-0.25 μm MOSFETs with 25 angstroms-50 angstroms gate oxides grown on nitrogen implanted Si substrates

AU - Liu, C. T.

AU - Misra, D.

AU - Cheung, K. P.

AU - Alers, G. B.

AU - Chang, C. P.

AU - Colonell, J. I.

AU - Lai, W. Y.C.

AU - Pai, C. S.

AU - Liu, R.

AU - Clemens, J. T.

PY - 1997

Y1 - 1997

N2 - A light dose of nitrogen implant is introduced into the Si substrate before growing the oxides, and incorporated 3-4 atomic% of nitrogen in the oxides. The 1/f noise is reduced by a factor of 2-5 and gm degradation by a factor of 5. The N+ I/I does not affect the oxide breakdown field which continues to follow the hole-trap model as the oxide thickness reaches 25 angstroms.

AB - A light dose of nitrogen implant is introduced into the Si substrate before growing the oxides, and incorporated 3-4 atomic% of nitrogen in the oxides. The 1/f noise is reduced by a factor of 2-5 and gm degradation by a factor of 5. The N+ I/I does not affect the oxide breakdown field which continues to follow the hole-trap model as the oxide thickness reaches 25 angstroms.

UR - https://www.scopus.com/pages/publications/0030659289

UR - https://www.scopus.com/pages/publications/0030659289#tab=citedBy

M3 - Paper

AN - SCOPUS:0030659289

SP - 124

EP - 125

T2 - Proceedings of the 1997 55th Annual Device Research Conference

Y2 - 23 June 1997 through 25 June 1997

ER -

Reduced 1/f noise and g_m degradation for sub-0.25 μm MOSFETs with 25 angstroms-50 angstroms gate oxides grown on nitrogen implanted Si substrates

Abstract

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All Science Journal Classification (ASJC) codes

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