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Reduced 1/f noise and gm degradation for sub-0.25 μm MOSFETs with 25 angstroms-50 angstroms gate oxides grown on nitrogen implanted Si substrates

  • C. T. Liu
  • , D. Misra
  • , K. P. Cheung
  • , G. B. Alers
  • , C. P. Chang
  • , J. I. Colonell
  • , W. Y.C. Lai
  • , C. S. Pai
  • , R. Liu
  • , J. T. Clemens

Research output: Contribution to conference › Paper › peer-review

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