Reduced 1/f noise and gm degradation for sub-0.25 μm MOSFETs with 25 angstroms-50 angstroms gate oxides grown on nitrogen implanted Si substrates

C. T. Liu, D. Misra, K. P. Cheung, G. B. Alers, C. P. Chang, J. I. Colonell, W. Y.C. Lai, C. S. Pai, R. Liu, J. T. Clemens

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Engineering & Materials Science