@inproceedings{0eac3d408fa848dd8a46ea2011c229e9,
title = "Reduction of interface states in Ge/High-k gate stacks and its reliability implications",
abstract = "This work reviews a process that was developed to enhance the interface state density of a Ge/High-k interface. A slot plane antenna plasma oxidation (SPAO) process was implemented during dielectric deposition steps to fabricate TiN/ZrO2/Al2O3/p-Ge MOS gate stacks. A poor interface was observed with SPAO being performed before Al2O3/ZrO2 gate stack deposition because of fragmented GeOX interfacial layer formation. Significant decrease in interface state density was observed because of the formation of a stable and moderately thick GeOX interfacial layer when SPAO was performed in between Al2O3/ZrO2 deposition. When SPAO was performed after the deposition of both the high-k layers, higher Dit was observed suggesting a GeO2 layer formation. Time Dependent Dielectric Breakdown (TDDB) measurements suggest that stable and moderately thick GeOX interfacial layer (SPAO was in-between the two high-k layers) provides better immunity to degradation under stress. It was further observed that if GeO2 is at the interface then it degrades at a faster rate. The trap distribution in dielectric layers and interfacial layer properties contribute to the dielectric breakdown. SPAO seems to be an excellent processing step during high-k deposition to enhance the Ge/High-k devices.",
keywords = "Equivalent oxide thickness (EOT), Flat-band voltage shift (Δ VFB), Interface state density (Dit), SPAO, Stress induced leakage current (SILC), Time dependent dielectric breakdown (TDDB)",
author = "D. Misra and Ding, {Y. M.} and S. Mukhopadhyay and Ganapathi, {K. L.} and N. Bhat",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 ; Conference date: 25-10-2016 Through 28-10-2016",
year = "2016",
doi = "10.1109/ICSICT.2016.7998962",
language = "English (US)",
series = "2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "499--503",
editor = "Yu-Long Jiang and Ting-Ao Tang and Ru Huang",
booktitle = "2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings",
address = "United States",
}