Reduction of interface states in Ge/High-k gate stacks and its reliability implications

D. Misra, Y. M. Ding, S. Mukhopadhyay, K. L. Ganapathi, N. Bhat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work reviews a process that was developed to enhance the interface state density of a Ge/High-k interface. A slot plane antenna plasma oxidation (SPAO) process was implemented during dielectric deposition steps to fabricate TiN/ZrO2/Al2O3/p-Ge MOS gate stacks. A poor interface was observed with SPAO being performed before Al2O3/ZrO2 gate stack deposition because of fragmented GeOX interfacial layer formation. Significant decrease in interface state density was observed because of the formation of a stable and moderately thick GeOX interfacial layer when SPAO was performed in between Al2O3/ZrO2 deposition. When SPAO was performed after the deposition of both the high-k layers, higher Dit was observed suggesting a GeO2 layer formation. Time Dependent Dielectric Breakdown (TDDB) measurements suggest that stable and moderately thick GeOX interfacial layer (SPAO was in-between the two high-k layers) provides better immunity to degradation under stress. It was further observed that if GeO2 is at the interface then it degrades at a faster rate. The trap distribution in dielectric layers and interfacial layer properties contribute to the dielectric breakdown. SPAO seems to be an excellent processing step during high-k deposition to enhance the Ge/High-k devices.

Original languageEnglish (US)
Title of host publication2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings
EditorsRu Huang, Ting-Ao Tang, Yu-Long Jiang
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages499-503
Number of pages5
ISBN (Electronic)9781467397179
DOIs
StatePublished - Jul 31 2017
Event13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Hangzhou, China
Duration: Oct 25 2016Oct 28 2016

Publication series

Name2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings

Other

Other13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016
CountryChina
CityHangzhou
Period10/25/1610/28/16

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Keywords

  • Equivalent oxide thickness (EOT)
  • Flat-band voltage shift (Δ VFB)
  • Interface state density (Dit)
  • SPAO
  • Stress induced leakage current (SILC)
  • Time dependent dielectric breakdown (TDDB)

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