Relaxor behavior in Ba0.8Sr0.2TiO3/ ZrO2 heterostructured thin films

Santosh K. Sahoo, H. Bakhru, Sumit Kumar, D. Misra, Y. N. Mohapatra, D. C. Agrawal

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Ba0.8Sr0.2TiO3 (BST) thin films and Ba0.8Sr0.2TiO3/ZrO2 heterostructured thin films have been successfully fabricated on Pt/Ti/SiO2/Si substrates by a sol-gel process. The dielectric properties of these films were measured as a function of temperature in the frequency range of 1 kHz to 1 MHz. It is clearly observed that the dielectric peaks exist and shift to high temperature with the increase of frequency indicating the presence of relaxor-type behavior in the films. Also it is seen that one dielectric peak is observed in single layer BST thin films whereas two dielectric peaks are observed in BST/ZrO2 heterostructured thin films due to the presence of two dielectric layers having different band gap energies. The variation of peak temperature Tm, corresponding to dielectric loss maximum, with frequency and fitting to Arrhenius law gives activation energy of 1.24 eV which is very close to the activation energy of oxygen vacancies in BaTiO3. Hence, oxygen vacancies are the active defects which are contributing to the relaxation process in these films.

Original languageEnglish (US)
Title of host publicationNanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems
Pages89-96
Number of pages8
DOIs
StatePublished - 2012
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2012Apr 13 2012

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1454
ISSN (Print)0272-9172

Other

Other2012 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/9/124/13/12

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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