Reliability considerations of high-k gate dielectrics deposited by various intermediate treatment

Keyphrases

• High-k Gate Dielectrics 100%
• Intermediate Care 100%
• HfO2 66%
• Increased Reliability 66%
• Plasma Exposure 66%
• Dielectric 33%
• Atomic Layer Deposition 33%
• Cyclic Process 33%
• Stress-induced 33%
• Annealing 33%
• Post-deposition Annealing 33%
• Gate Stack 33%
• Zirconium Dioxide 33%
• EOT Scaling 33%
• Intermediate Annealing 33%
• Reliability Characteristics 33%
• Reliability Performance 33%
• Single post 33%
• Ar Plasma 33%
• Stress Induced Leakage Current 33%
• CexZr1-xO2 33%
• Trap Formation 33%
• Flat-band Voltage 33%
• Silicon Oxynitride (SiON) 33%

Engineering

• Dielectrics 100%
• Alloying 100%
• Atomic Layer Deposition 100%
• Induced Stress 100%
• Gate Stack 100%
• Gate Dielectric 100%
• Stress Induced Leakage Current 100%
• Ar Plasma 100%
• Reliability Consideration 100%
• Deposition Process 100%