Reliability of HfAlOx in multi layered gate stack

M. Nasir Bhuyian; D. Misra

doi:10.1109/IRPS.2015.7112821

Reliability of HfAlO_x in multi layered gate stack

M. Nasir Bhuyian, D. Misra

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

This work has demonstrated a high quality HfO₂ based gate stack by depositing HfAlO_x along with HfO₂ in a layered structure. In order to get multifold enhancement of the gate stack quality both Al percentage and distribution were observed by varying the HfAlO_x layer thickness and it was found that < 2% Al/(Al+Hf)% incorporation can result in up to 18% reduction in average EOT along with up to 41% reduction in gate leakage current as compared to the dielectric with no Al content. On the other hand, excess Al presence in the interfacial layer moderately increased the interface state density (D_it). When devices were stressed in the gate injection mode at a constant voltage stress, dielectrics with Al/(Hf+Al)% < 2% showed resistance to stress induced flat-band voltage shift (ΔV_FB), and stress induced leakage current (SILC). The time dependent dielectric breakdown (TDDB) characteristics showed a higher charge to breakdown and an increase in the extracted Weibull slope (β) that further confirms an enhanced dielectric reliability for devices with < 2% Al/(Al+Hf)%.

Original language	English (US)
Title of host publication	2015 IEEE International Reliability Physics Symposium, IRPS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	PI31-PI37
ISBN (Electronic)	9781467373623
DOIs	https://doi.org/10.1109/IRPS.2015.7112821
State	Published - May 26 2015
Event	IEEE International Reliability Physics Symposium, IRPS 2015 - Monterey, United States Duration: Apr 19 2015 → Apr 23 2015

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2015-May
ISSN (Print)	1541-7026

Other

Other	IEEE International Reliability Physics Symposium, IRPS 2015
Country/Territory	United States
City	Monterey
Period	4/19/15 → 4/23/15

All Science Journal Classification (ASJC) codes

General Engineering

Keywords

Equivalent oxide thickness (EOT)
HfAlO
interface state density (Dit)
stress induced flat-band voltage shift (ΔVFB)
stress induced leakage current (SILC)
time dependent dielectric breakdown (TDDB)

Access to Document

10.1109/IRPS.2015.7112821

Cite this

@inproceedings{12cb025cf98f4a889c52015a3bc60532,

title = "Reliability of HfAlOx in multi layered gate stack",

abstract = "This work has demonstrated a high quality HfO2 based gate stack by depositing HfAlOx along with HfO2 in a layered structure. In order to get multifold enhancement of the gate stack quality both Al percentage and distribution were observed by varying the HfAlOx layer thickness and it was found that < 2% Al/(Al+Hf)% incorporation can result in up to 18% reduction in average EOT along with up to 41% reduction in gate leakage current as compared to the dielectric with no Al content. On the other hand, excess Al presence in the interfacial layer moderately increased the interface state density (Dit). When devices were stressed in the gate injection mode at a constant voltage stress, dielectrics with Al/(Hf+Al)% < 2% showed resistance to stress induced flat-band voltage shift (ΔVFB), and stress induced leakage current (SILC). The time dependent dielectric breakdown (TDDB) characteristics showed a higher charge to breakdown and an increase in the extracted Weibull slope (β) that further confirms an enhanced dielectric reliability for devices with < 2% Al/(Al+Hf)%.",

keywords = "Equivalent oxide thickness (EOT), HfAlO, interface state density (Dit), stress induced flat-band voltage shift (ΔVFB), stress induced leakage current (SILC), time dependent dielectric breakdown (TDDB)",

author = "Bhuyian, {M. Nasir} and D. Misra",

year = "2015",

month = may,

day = "26",

doi = "10.1109/IRPS.2015.7112821",

language = "English (US)",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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note = "IEEE International Reliability Physics Symposium, IRPS 2015 ; Conference date: 19-04-2015 Through 23-04-2015",

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Bhuyian, MN & Misra, D 2015, Reliability of HfAlO_x in multi layered gate stack. in 2015 IEEE International Reliability Physics Symposium, IRPS 2015., 7112821, IEEE International Reliability Physics Symposium Proceedings, vol. 2015-May, Institute of Electrical and Electronics Engineers Inc., pp. PI31-PI37, IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, United States, 4/19/15. https://doi.org/10.1109/IRPS.2015.7112821

Reliability of HfAlO_x in multi layered gate stack. / Bhuyian, M. Nasir; Misra, D.
2015 IEEE International Reliability Physics Symposium, IRPS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. PI31-PI37 7112821 (IEEE International Reliability Physics Symposium Proceedings; Vol. 2015-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Misra, D.

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N2 - This work has demonstrated a high quality HfO2 based gate stack by depositing HfAlOx along with HfO2 in a layered structure. In order to get multifold enhancement of the gate stack quality both Al percentage and distribution were observed by varying the HfAlOx layer thickness and it was found that < 2% Al/(Al+Hf)% incorporation can result in up to 18% reduction in average EOT along with up to 41% reduction in gate leakage current as compared to the dielectric with no Al content. On the other hand, excess Al presence in the interfacial layer moderately increased the interface state density (Dit). When devices were stressed in the gate injection mode at a constant voltage stress, dielectrics with Al/(Hf+Al)% < 2% showed resistance to stress induced flat-band voltage shift (ΔVFB), and stress induced leakage current (SILC). The time dependent dielectric breakdown (TDDB) characteristics showed a higher charge to breakdown and an increase in the extracted Weibull slope (β) that further confirms an enhanced dielectric reliability for devices with < 2% Al/(Al+Hf)%.

AB - This work has demonstrated a high quality HfO2 based gate stack by depositing HfAlOx along with HfO2 in a layered structure. In order to get multifold enhancement of the gate stack quality both Al percentage and distribution were observed by varying the HfAlOx layer thickness and it was found that < 2% Al/(Al+Hf)% incorporation can result in up to 18% reduction in average EOT along with up to 41% reduction in gate leakage current as compared to the dielectric with no Al content. On the other hand, excess Al presence in the interfacial layer moderately increased the interface state density (Dit). When devices were stressed in the gate injection mode at a constant voltage stress, dielectrics with Al/(Hf+Al)% < 2% showed resistance to stress induced flat-band voltage shift (ΔVFB), and stress induced leakage current (SILC). The time dependent dielectric breakdown (TDDB) characteristics showed a higher charge to breakdown and an increase in the extracted Weibull slope (β) that further confirms an enhanced dielectric reliability for devices with < 2% Al/(Al+Hf)%.

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