Reliability of post plasma oxidation processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge substrates

M. N. Bhuyian, A. Sengupta, Y. Ding, D. Misra, K. Tapily, R. D. Clark, S. Consiglio, C. S. Wajda, G. J. Leusink

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we have investigated the impact of Slot-Plane Antenna Plasma Oxidation (SPAO) on TiN/Hf1-xZrxO2/Al2O3/Ge gate stack with six different Zr content (0%, 25%, 33%, 50%, 75%, and 100%) in the dielectrics. The dielectrics were subjected to SPAO after the ALD deposition process prior to metal deposition. The equivalent oxide thickness (EOT), flat-band voltage (VFB), interface state density (Dit), C-V hysteresis, and leakage current (I-V) behavior were analyzed. It was observed that EOT decreases with Zr addition in HfO2 with up to 75% of Zr incorporation. While the devices with up to 75% of Zr demonstrated lower C-V hysteresis, flat-band voltage shift and mid-gap Dit tend to increase with decrease in EOT. With 100% Zr incorporation EOT increased significantly while reducing the mid-gap Dit. This behavior is mostly dependent on GeOx-like interfacial layer formation and defects at the interface.

Original languageEnglish (US)
Title of host publicationEmerging Materials for Post CMOS Devices/Sensing and Applications 8
EditorsD. Misra, P. Hesketh, Z. Karim, S. De Gendt, Y. Obeng, P. Srinivasan
PublisherElectrochemical Society Inc.
Pages99-108
Number of pages10
Edition2
ISBN (Electronic)9781607688051
DOIs
StatePublished - 2017
EventSymposium on Emerging Materials for Post CMOS Devices/Sensing and Applications 8 - 231st ECS Meeting 2017 - New Orleans, United States
Duration: May 28 2017Jun 1 2017

Publication series

NameECS Transactions
Number2
Volume77
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Emerging Materials for Post CMOS Devices/Sensing and Applications 8 - 231st ECS Meeting 2017
CountryUnited States
CityNew Orleans
Period5/28/176/1/17

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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