@inproceedings{1a406df3160548f38dbc805d6d6dc380,
title = "Reliability of post plasma oxidation processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge substrates",
abstract = "In this work, we have investigated the impact of Slot-Plane Antenna Plasma Oxidation (SPAO) on TiN/Hf1-xZrxO2/Al2O3/Ge gate stack with six different Zr content (0%, 25%, 33%, 50%, 75%, and 100%) in the dielectrics. The dielectrics were subjected to SPAO after the ALD deposition process prior to metal deposition. The equivalent oxide thickness (EOT), flat-band voltage (VFB), interface state density (Dit), C-V hysteresis, and leakage current (I-V) behavior were analyzed. It was observed that EOT decreases with Zr addition in HfO2 with up to 75% of Zr incorporation. While the devices with up to 75% of Zr demonstrated lower C-V hysteresis, flat-band voltage shift and mid-gap Dit tend to increase with decrease in EOT. With 100% Zr incorporation EOT increased significantly while reducing the mid-gap Dit. This behavior is mostly dependent on GeOx-like interfacial layer formation and defects at the interface.",
author = "Bhuyian, {M. N.} and A. Sengupta and Y. Ding and D. Misra and K. Tapily and Clark, {R. D.} and S. Consiglio and Wajda, {C. S.} and Leusink, {G. J.}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Emerging Materials for Post CMOS Devices/Sensing and Applications 8 - 231st ECS Meeting 2017 ; Conference date: 28-05-2017 Through 01-06-2017",
year = "2017",
doi = "10.1149/07702.0099ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "99--108",
editor = "D. Misra and P. Hesketh and Z. Karim and {De Gendt}, S. and Y. Obeng and P. Srinivasan",
booktitle = "Emerging Materials for Post CMOS Devices/Sensing and Applications 8",
edition = "2",
}