Reliability of post plasma oxidation processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge substrates

M. N. Bhuyian; A. Sengupta; Y. Ding; D. Misra; K. Tapily; R. D. Clark; S. Consiglio; C. S. Wajda; G. J. Leusink

doi:10.1149/07702.0099ecst

Reliability of post plasma oxidation processed ALD Al₂O₃/Hf_1-xZr_xO₂ Thin Films on Ge substrates

M. N. Bhuyian
, A. Sengupta
, Y. Ding
, D. Misra
, K. Tapily
, R. D. Clark
, S. Consiglio
, C. S. Wajda
, G. J. Leusink

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, we have investigated the impact of Slot-Plane Antenna Plasma Oxidation (SPAO) on TiN/Hf_1-xZr_xO₂/Al₂O₃/Ge gate stack with six different Zr content (0%, 25%, 33%, 50%, 75%, and 100%) in the dielectrics. The dielectrics were subjected to SPAO after the ALD deposition process prior to metal deposition. The equivalent oxide thickness (EOT), flat-band voltage (V_FB), interface state density (D_it), C-V hysteresis, and leakage current (I-V) behavior were analyzed. It was observed that EOT decreases with Zr addition in HfO₂ with up to 75% of Zr incorporation. While the devices with up to 75% of Zr demonstrated lower C-V hysteresis, flat-band voltage shift and mid-gap D_it tend to increase with decrease in EOT. With 100% Zr incorporation EOT increased significantly while reducing the mid-gap D_it. This behavior is mostly dependent on GeO_x-like interfacial layer formation and defects at the interface.

Original language	English (US)
Title of host publication	Emerging Materials for Post CMOS Devices/Sensing and Applications 8
Editors	D. Misra, P. Hesketh, Z. Karim, S. De Gendt, Y. Obeng, P. Srinivasan
Publisher	Electrochemical Society Inc.
Pages	99-108
Number of pages	10
Edition	2
ISBN (Electronic)	9781607688051
DOIs	https://doi.org/10.1149/07702.0099ecst
State	Published - 2017
Event	Symposium on Emerging Materials for Post CMOS Devices/Sensing and Applications 8 - 231st ECS Meeting 2017 - New Orleans, United States Duration: May 28 2017 → Jun 1 2017

Publication series

Name	ECS Transactions
Number	2
Volume	77
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Emerging Materials for Post CMOS Devices/Sensing and Applications 8 - 231st ECS Meeting 2017
Country/Territory	United States
City	New Orleans
Period	5/28/17 → 6/1/17

All Science Journal Classification (ASJC) codes

General Engineering

Access to Document

10.1149/07702.0099ecst

Cite this

Bhuyian, M. N., Sengupta, A., Ding, Y., Misra, D., Tapily, K., Clark, R. D., Consiglio, S., Wajda, C. S., & Leusink, G. J. (2017). Reliability of post plasma oxidation processed ALD Al₂O₃/Hf_1-xZr_xO₂ Thin Films on Ge substrates. In D. Misra, P. Hesketh, Z. Karim, S. De Gendt, Y. Obeng, & P. Srinivasan (Eds.), Emerging Materials for Post CMOS Devices/Sensing and Applications 8 (2 ed., pp. 99-108). (ECS Transactions; Vol. 77, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/07702.0099ecst

Bhuyian, M. N. ; Sengupta, A. ; Ding, Y. et al. / Reliability of post plasma oxidation processed ALD Al₂O₃/Hf_1-xZr_xO₂ Thin Films on Ge substrates. Emerging Materials for Post CMOS Devices/Sensing and Applications 8. editor / D. Misra ; P. Hesketh ; Z. Karim ; S. De Gendt ; Y. Obeng ; P. Srinivasan. 2. ed. Electrochemical Society Inc., 2017. pp. 99-108 (ECS Transactions; 2).

@inproceedings{1a406df3160548f38dbc805d6d6dc380,

title = "Reliability of post plasma oxidation processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge substrates",

abstract = "In this work, we have investigated the impact of Slot-Plane Antenna Plasma Oxidation (SPAO) on TiN/Hf1-xZrxO2/Al2O3/Ge gate stack with six different Zr content (0\%, 25\%, 33\%, 50\%, 75\%, and 100\%) in the dielectrics. The dielectrics were subjected to SPAO after the ALD deposition process prior to metal deposition. The equivalent oxide thickness (EOT), flat-band voltage (VFB), interface state density (Dit), C-V hysteresis, and leakage current (I-V) behavior were analyzed. It was observed that EOT decreases with Zr addition in HfO2 with up to 75\% of Zr incorporation. While the devices with up to 75\% of Zr demonstrated lower C-V hysteresis, flat-band voltage shift and mid-gap Dit tend to increase with decrease in EOT. With 100\% Zr incorporation EOT increased significantly while reducing the mid-gap Dit. This behavior is mostly dependent on GeOx-like interfacial layer formation and defects at the interface.",

author = "Bhuyian, \{M. N.\} and A. Sengupta and Y. Ding and D. Misra and K. Tapily and Clark, \{R. D.\} and S. Consiglio and Wajda, \{C. S.\} and Leusink, \{G. J.\}",

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Bhuyian, MN, Sengupta, A, Ding, Y, Misra, D, Tapily, K, Clark, RD, Consiglio, S, Wajda, CS & Leusink, GJ 2017, Reliability of post plasma oxidation processed ALD Al₂O₃/Hf_1-xZr_xO₂ Thin Films on Ge substrates. in D Misra, P Hesketh, Z Karim, S De Gendt, Y Obeng & P Srinivasan (eds), Emerging Materials for Post CMOS Devices/Sensing and Applications 8. 2 edn, ECS Transactions, no. 2, vol. 77, Electrochemical Society Inc., pp. 99-108, Symposium on Emerging Materials for Post CMOS Devices/Sensing and Applications 8 - 231st ECS Meeting 2017, New Orleans, United States, 5/28/17. https://doi.org/10.1149/07702.0099ecst

Reliability of post plasma oxidation processed ALD Al₂O₃/Hf_1-xZr_xO₂ Thin Films on Ge substrates. / Bhuyian, M. N.; Sengupta, A.; Ding, Y. et al.
Emerging Materials for Post CMOS Devices/Sensing and Applications 8. ed. / D. Misra; P. Hesketh; Z. Karim; S. De Gendt; Y. Obeng; P. Srinivasan. 2. ed. Electrochemical Society Inc., 2017. p. 99-108 (ECS Transactions; Vol. 77, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Reliability of post plasma oxidation processed ALD Al2O3/Hf1-xZrxO2 Thin Films on Ge substrates

AU - Bhuyian, M. N.

AU - Sengupta, A.

AU - Ding, Y.

AU - Misra, D.

AU - Tapily, K.

AU - Clark, R. D.

AU - Consiglio, S.

AU - Wajda, C. S.

AU - Leusink, G. J.

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2017

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N2 - In this work, we have investigated the impact of Slot-Plane Antenna Plasma Oxidation (SPAO) on TiN/Hf1-xZrxO2/Al2O3/Ge gate stack with six different Zr content (0%, 25%, 33%, 50%, 75%, and 100%) in the dielectrics. The dielectrics were subjected to SPAO after the ALD deposition process prior to metal deposition. The equivalent oxide thickness (EOT), flat-band voltage (VFB), interface state density (Dit), C-V hysteresis, and leakage current (I-V) behavior were analyzed. It was observed that EOT decreases with Zr addition in HfO2 with up to 75% of Zr incorporation. While the devices with up to 75% of Zr demonstrated lower C-V hysteresis, flat-band voltage shift and mid-gap Dit tend to increase with decrease in EOT. With 100% Zr incorporation EOT increased significantly while reducing the mid-gap Dit. This behavior is mostly dependent on GeOx-like interfacial layer formation and defects at the interface.

AB - In this work, we have investigated the impact of Slot-Plane Antenna Plasma Oxidation (SPAO) on TiN/Hf1-xZrxO2/Al2O3/Ge gate stack with six different Zr content (0%, 25%, 33%, 50%, 75%, and 100%) in the dielectrics. The dielectrics were subjected to SPAO after the ALD deposition process prior to metal deposition. The equivalent oxide thickness (EOT), flat-band voltage (VFB), interface state density (Dit), C-V hysteresis, and leakage current (I-V) behavior were analyzed. It was observed that EOT decreases with Zr addition in HfO2 with up to 75% of Zr incorporation. While the devices with up to 75% of Zr demonstrated lower C-V hysteresis, flat-band voltage shift and mid-gap Dit tend to increase with decrease in EOT. With 100% Zr incorporation EOT increased significantly while reducing the mid-gap Dit. This behavior is mostly dependent on GeOx-like interfacial layer formation and defects at the interface.

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BT - Emerging Materials for Post CMOS Devices/Sensing and Applications 8

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Bhuyian MN, Sengupta A, Ding Y, Misra D, Tapily K, Clark RD et al. Reliability of post plasma oxidation processed ALD Al₂O₃/Hf_1-xZr_xO₂ Thin Films on Ge substrates. In Misra D, Hesketh P, Karim Z, De Gendt S, Obeng Y, Srinivasan P, editors, Emerging Materials for Post CMOS Devices/Sensing and Applications 8. 2 ed. Electrochemical Society Inc. 2017. p. 99-108. (ECS Transactions; 2). doi: 10.1149/07702.0099ecst