We have investigated the reliability of gate oxide with deuterium incorporated at the Si/SiO2 interface through low energy ion implantation into the silicon substrate before thin gate oxide growth. Deuterium implantation at a dose of 1 × 1014/cm2 at 25 keV showed improved breakdown characteristics. Charge-to-breakdown seems to correlate well with the interface state density measured by conductance method.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering