Reliability of thin oxides grown on deuterium implanted silicon substrate

D. Misra, R. K. Jarwal

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We have investigated the reliability of gate oxide with deuterium incorporated at the Si/SiO2 interface through low energy ion implantation into the silicon substrate before thin gate oxide growth. Deuterium implantation at a dose of 1 × 1014/cm2 at 25 keV showed improved breakdown characteristics. Charge-to-breakdown seems to correlate well with the interface state density measured by conductance method.

Original languageEnglish (US)
Pages (from-to)1015-1016
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume48
Issue number5
DOIs
StatePublished - May 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Reliability of thin oxides grown on deuterium implanted silicon substrate'. Together they form a unique fingerprint.

Cite this