Reliability of thin oxides grown on deuterium implanted silicon substrate

D. Misra; R. K. Jarwal

doi:10.1109/16.918256

Reliability of thin oxides grown on deuterium implanted silicon substrate

D. Misra, R. K. Jarwal

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have investigated the reliability of gate oxide with deuterium incorporated at the Si/SiO₂ interface through low energy ion implantation into the silicon substrate before thin gate oxide growth. Deuterium implantation at a dose of 1 × 10¹⁴/cm² at 25 keV showed improved breakdown characteristics. Charge-to-breakdown seems to correlate well with the interface state density measured by conductance method.

Original language	English (US)
Pages (from-to)	1015-1016
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	5
DOIs	https://doi.org/10.1109/16.918256
State	Published - May 2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.918256

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title = "Reliability of thin oxides grown on deuterium implanted silicon substrate",

abstract = "We have investigated the reliability of gate oxide with deuterium incorporated at the Si/SiO2 interface through low energy ion implantation into the silicon substrate before thin gate oxide growth. Deuterium implantation at a dose of 1 × 1014/cm2 at 25 keV showed improved breakdown characteristics. Charge-to-breakdown seems to correlate well with the interface state density measured by conductance method.",

author = "D. Misra and Jarwal, \{R. K.\}",

note = "Funding Information: Manuscript received July 6, 2000; revised November 27, 2000. This work was supported by New Jersey Center for Optoelectronics and National Science Foundation Grant 9732697. The review of this brief was arranged by Editor R. Singh.",

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AU - Jarwal, R. K.

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PY - 2001/5

Y1 - 2001/5

N2 - We have investigated the reliability of gate oxide with deuterium incorporated at the Si/SiO2 interface through low energy ion implantation into the silicon substrate before thin gate oxide growth. Deuterium implantation at a dose of 1 × 1014/cm2 at 25 keV showed improved breakdown characteristics. Charge-to-breakdown seems to correlate well with the interface state density measured by conductance method.

AB - We have investigated the reliability of gate oxide with deuterium incorporated at the Si/SiO2 interface through low energy ion implantation into the silicon substrate before thin gate oxide growth. Deuterium implantation at a dose of 1 × 1014/cm2 at 25 keV showed improved breakdown characteristics. Charge-to-breakdown seems to correlate well with the interface state density measured by conductance method.

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JO - IEEE Transactions on Electron Devices

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Reliability of thin oxides grown on deuterium implanted silicon substrate

Abstract

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