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Reliability of thin oxides grown on deuterium implanted silicon substrate
D. Misra
, R. K. Jarwal
Electrical and Computer Engineering
Research output
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Contribution to journal
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Article
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peer-review
2
Scopus citations
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Keyphrases
Silicon Substrate
100%
Deuterium
100%
Implanted Silicon
100%
Thin Oxides
100%
Low-energy Ion Implantation
50%
Thin Gate Oxide
50%
Si-SiO2 Interface
50%
Breakdown Characteristics
50%
Gate Oxide
50%
Interface State Density
50%
Oxide Growth
50%
Deuterium Implantation
50%
Conductance Method
50%
Charge to Breakdown
50%
Engineering
Silicon Substrate
100%
Gate Oxide
100%
Ion Implantation
50%
Interface State
50%
Oxide Growth
50%